03N06

03N06

Images are for reference only
See Product Specifications

03N06
Описание:
N60V,RD(MAX)<100M@10V,RD(MAX)<12
Упаковка:
Tape & Reel (TR)
Datasheet:
03N06 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:03N06
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Goford Semiconductor
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):5568a11e95c42251b4839598cb5b4518
Current - Continuous Drain (Id) @ 25°C:657dae0913ee12be6fb2a6f687aae1c7
Drive Voltage (Max Rds On, Min Rds On):336d5ebc5436534e61d16e63ddfca327
Rds On (Max) @ Id, Vgs:ab9e8d3a8f4f2abf0f575f5805707b3e
Vgs(th) (Max) @ Id:b84520e401b6763187bb539da6d1dfbf
Gate Charge (Qg) (Max) @ Vgs:159916f84ead3d142d9c56373fd0245a
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:662b102a6592de6a373c3f79e5c22b61
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):38d969bd31592ce2ee4d681dcbb21fd0
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:cdbfc7f87dda2b41686a11d9db7bf62e
Package / Case:51bf93173785f0f3fc2d8b70cf119689
In Stock: 686
Stock:
686 Can Ship Immediately
  • Делиться:
Для использования с
IPP120P04P4L03AKSA2
IPP120P04P4L03AKSA2
Infineon Technologies
MOSFET P-CH 40V 120A TO220-3
NTBGS002N06C
NTBGS002N06C
onsemi
POWER MOSFET, 60 V, 2.2 M?, 211
PSMN014-40YS,115
PSMN014-40YS,115
Nexperia USA Inc.
MOSFET N-CH 40V 46A LFPAK56
IRFR9024TRPBF-BE3
IRFR9024TRPBF-BE3
Vishay Siliconix
MOSFET P-CH 60V 8.8A DPAK
APT10078BLLG
APT10078BLLG
Microchip Technology
MOSFET N-CH 1000V 14A TO247
DMT6011LSS-13
DMT6011LSS-13
Diodes Incorporated
MOSFET BVDSS: 41V~60V SO-8 T&R 2
SIHP17N60D-E3
SIHP17N60D-E3
Vishay Siliconix
MOSFET N-CH 600V 17A TO220AB
IRLM210ATF
IRLM210ATF
onsemi
MOSFET N-CH 200V 770MA SOT223-4
NTR4502PT1
NTR4502PT1
onsemi
MOSFET P-CH 30V 1.13A SOT23-3
IXFV110N10P
IXFV110N10P
IXYS
MOSFET N-CH 100V 110A PLUS220
FK3506010L
FK3506010L
Panasonic Electronic Components
MOSFET N-CH 60V 100MA SMINI3
AO3422L_103
AO3422L_103
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 55V 2.1A SOT23-3
Вас также может заинтересовать
G1002L
G1002L
Goford Semiconductor
N100V,RD(MAX)<250M@10V,VTH1.2V~2
G2014
G2014
Goford Semiconductor
N20V,RD(MAX)<[email protected],RD(MAX)<11M
G12P03D3
G12P03D3
Goford Semiconductor
P30V,RD(MAX)<20M@-10V,RD(MAX)<26
G06N06S
G06N06S
Goford Semiconductor
N60V,RD(MAX)<22M@10V,RD(MAX)<35M
G26P04K
G26P04K
Goford Semiconductor
P-40V,RD(MAX)<18M@-10V,RD(MAX)<2
GT55N06D5
GT55N06D5
Goford Semiconductor
N60V,RD(MAX)<8M@10V,RD(MAX)<13M@
G02P06
G02P06
Goford Semiconductor
P60V,RD(MAX)<190M@-10V,RD(MAX)<2
G3035L
G3035L
Goford Semiconductor
P30V,RD(MAX)<59M@-10V,RD(MAX)<75
G16P03S
G16P03S
Goford Semiconductor
P30V,RD(MAX)<12M@-10V,RD(MAX)<18
GT095N10D5
GT095N10D5
Goford Semiconductor
N100V,RD(MAX)<11M@10V,RD(MAX)<15
GT105N10F
GT105N10F
Goford Semiconductor
N100V,RD(MAX)<10.5M@10V,RD(MAX)<
G65P06F
G65P06F
Goford Semiconductor
P-CH, -60V, 65A, RD(MAX)<18M@-10