03N06

03N06

Images are for reference only
See Product Specifications

03N06
Описание:
N60V,RD(MAX)<100M@10V,RD(MAX)<12
Упаковка:
Tape & Reel (TR)
Datasheet:
03N06 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:03N06
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Goford Semiconductor
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):5568a11e95c42251b4839598cb5b4518
Current - Continuous Drain (Id) @ 25°C:657dae0913ee12be6fb2a6f687aae1c7
Drive Voltage (Max Rds On, Min Rds On):336d5ebc5436534e61d16e63ddfca327
Rds On (Max) @ Id, Vgs:ab9e8d3a8f4f2abf0f575f5805707b3e
Vgs(th) (Max) @ Id:b84520e401b6763187bb539da6d1dfbf
Gate Charge (Qg) (Max) @ Vgs:159916f84ead3d142d9c56373fd0245a
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:662b102a6592de6a373c3f79e5c22b61
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):38d969bd31592ce2ee4d681dcbb21fd0
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:cdbfc7f87dda2b41686a11d9db7bf62e
Package / Case:51bf93173785f0f3fc2d8b70cf119689
In Stock: 686
Stock:
686 Can Ship Immediately
  • Делиться:
Для использования с
G2R1000MT17J
G2R1000MT17J
GeneSiC Semiconductor
SIC MOSFET N-CH 3A TO263-7
PHD71NQ03LT,118
PHD71NQ03LT,118
NXP USA Inc.
TRANSISTOR >30MHZ
PJA3432_R1_00001
PJA3432_R1_00001
Panjit International Inc.
SOT-23, MOSFET
FDMS8460
FDMS8460
onsemi
MOSFET N-CH 40V 25A/49A 8PQFN
TSM650N15CS RLG
TSM650N15CS RLG
Taiwan Semiconductor Corporation
MOSFET N-CHANNEL 150V 9A 8SOP
SI3473DDV-T1-GE3
SI3473DDV-T1-GE3
Vishay Siliconix
MOSFET P-CHANNEL 12V 8A 6TSOP
SISS94DN-T1-GE3
SISS94DN-T1-GE3
Vishay Siliconix
MOSFET N-CH 200V 5.4A/19.5A PPAK
IXFA26N30X3
IXFA26N30X3
IXYS
MOSFET N-CH 300V 26A TO263AA
NP70N04MUG-S18-AY
NP70N04MUG-S18-AY
Renesas Electronics America Inc
MOSFET N-CH 40V 70A TO220
IPS135N03LGAKMA1
IPS135N03LGAKMA1
Infineon Technologies
MOSFET N-CH 30V 30A TO251-3
NTD5865N-1G
NTD5865N-1G
onsemi
MOSFET N-CH 60V 43A DPAK
SI6466ADQ-T1-E3
SI6466ADQ-T1-E3
Vishay Siliconix
MOSFET N-CH 20V 6.8A 8TSSOP
Вас также может заинтересовать
G1002L
G1002L
Goford Semiconductor
N100V,RD(MAX)<250M@10V,VTH1.2V~2
G28N03D3
G28N03D3
Goford Semiconductor
N30V,RD(MAX)<12M@10V,RD(MAX)<18M
G23N06K
G23N06K
Goford Semiconductor
N60V,RD(MAX)<35M@10V,RD(MAX)<45M
G1003A
G1003A
Goford Semiconductor
N100V,RD(MAX)<210M@10V,RD(MAX)<2
G12P10K
G12P10K
Goford Semiconductor
P100V,RD(MAX)<200M@-10V,RD(MAX)<
G110N06K
G110N06K
Goford Semiconductor
N60V,RD(MAX)<6.4M@10V,RD(MAX)<8.
GC20N65T
GC20N65T
Goford Semiconductor
N650V,RD(MAX)<170M@10V,VTH2.5V~4
GC20N65Q
GC20N65Q
Goford Semiconductor
N650V,RD(MAX)<170M@10V,VTH2.5V~4
G15N06K
G15N06K
Goford Semiconductor
N-CH, 60V,15A,RD(MAX)<45M@10V,RD
45P40
45P40
Goford Semiconductor
P40V,RD(MAX)<14M@-10V,VTH2V~3V T
G75P04K
G75P04K
Goford Semiconductor
P40V,RD(MAX)<10M@-10V,VTH-1.2V~-
630AT
630AT
Goford Semiconductor
N200V,RD(MAX)<250M@10V,RD(MAX)<3