G1002L

G1002L

Images are for reference only
See Product Specifications

G1002L
Описание:
N100V,RD(MAX)<250M@10V,VTH1.2V~2
Упаковка:
Tape & Reel (TR)
Datasheet:
G1002L Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:G1002L
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Goford Semiconductor
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):227b5c7c7a2ed2ea3da210ed0860030d
Current - Continuous Drain (Id) @ 25°C:5f5468d54f2b86e7e60fac196581d7d0
Drive Voltage (Max Rds On, Min Rds On):336d5ebc5436534e61d16e63ddfca327
Rds On (Max) @ Id, Vgs:7e0d150fb5b4082c94259aafd2b53557
Vgs(th) (Max) @ Id:47646805bddee9d06a7f0cc80c73c037
Gate Charge (Qg) (Max) @ Vgs:9a935c8a1e91b57e9b3af740b54c1dd2
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:0aa976864a18ca26bbb0b64dde8ab1f7
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):2b51bf10a90e84273072326525adb219
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:ca2e3f0f4d8c71c0fd37e77f58d9ae2b
Package / Case:51bf93173785f0f3fc2d8b70cf119689
In Stock: 3000
Stock:
3000 Can Ship Immediately
  • Делиться:
Для использования с
DMN1004UFV-7
DMN1004UFV-7
Diodes Incorporated
MOSFET N-CH 12V 70A POWERDI3333
HAT2205C-EL-E
HAT2205C-EL-E
Renesas
HAT2205C - N-CHANNEL POWER MOSFE
SISS22DN-T1-GE3
SISS22DN-T1-GE3
Vishay Siliconix
MOSFET N-CH 60V 25A/90.6A PPAK
NTMTS001N06CTXG
NTMTS001N06CTXG
onsemi
MOSFET N-CH 60V 53.7A/376A 8DFNW
DMN65D8LT-13
DMN65D8LT-13
Diodes Incorporated
MOSFET BVDSS: 41V~60V SOT523 T&R
FDMC008N08C
FDMC008N08C
onsemi
MOSFET N-CHANNEL 80V 60A 8PQFN
IRFB41N15D
IRFB41N15D
Infineon Technologies
MOSFET N-CH 150V 41A TO220AB
IXTA98N075T
IXTA98N075T
IXYS
MOSFET N-CH 75V 98A TO263
5LN01C-TB-E
5LN01C-TB-E
onsemi
MOSFET N-CH 50V 100MA 3CP
IPP80N06S405AKSA2
IPP80N06S405AKSA2
Infineon Technologies
MOSFET N-CHANNEL_55/60V
SUP45P03-09-GE3
SUP45P03-09-GE3
Vishay Siliconix
MOSFET P-CH 30V 45A TO220AB
RD3H045SPTL1
RD3H045SPTL1
Rohm Semiconductor
MOSFET P-CH 45V 4.5A TO252
Вас также может заинтересовать
1002
1002
Goford Semiconductor
N100V,RD(MAX)<250M@10V,RD(MAX)<2
5N20A
5N20A
Goford Semiconductor
N200V,RD(MAX)<650M@10V,VTH1V~3V,
3400
3400
Goford Semiconductor
N30V,RD(MAX)<27M@10V,RD(MAX)<33M
GT52N10D5
GT52N10D5
Goford Semiconductor
N100V,RD(MAX)<7.5M@10V,RD(MAX)<1
G3035L
G3035L
Goford Semiconductor
P30V,RD(MAX)<59M@-10V,RD(MAX)<75
G60N10T
G60N10T
Goford Semiconductor
N100V,RD(MAX)<25M@10V,RD(MAX)<30
GT100N12D5
GT100N12D5
Goford Semiconductor
N120V,RD(MAX)<10M@10V,VTH2.5V~3.
630A
630A
Goford Semiconductor
N200V,RD(MAX)<280M@10V,VTH1V~3V,
G70N04T
G70N04T
Goford Semiconductor
N40V,RD(MAX)<7M@10V,RD(MAX)<12M@
GT105N10T
GT105N10T
Goford Semiconductor
N100V,RD(MAX)<10.5M@10V,RD(MAX)<
G65P06T
G65P06T
Goford Semiconductor
P-60V,RD(MAX)<18M@-10V,VTH-2.0V~
GT035N06T
GT035N06T
Goford Semiconductor
N-CH, 60V,170A, RD(MAX)<3.5M@10V