G1002L

G1002L

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See Product Specifications

G1002L
Описание:
N100V,RD(MAX)<250M@10V,VTH1.2V~2
Упаковка:
Tape & Reel (TR)
Datasheet:
G1002L Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:G1002L
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Goford Semiconductor
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):227b5c7c7a2ed2ea3da210ed0860030d
Current - Continuous Drain (Id) @ 25°C:5f5468d54f2b86e7e60fac196581d7d0
Drive Voltage (Max Rds On, Min Rds On):336d5ebc5436534e61d16e63ddfca327
Rds On (Max) @ Id, Vgs:7e0d150fb5b4082c94259aafd2b53557
Vgs(th) (Max) @ Id:47646805bddee9d06a7f0cc80c73c037
Gate Charge (Qg) (Max) @ Vgs:9a935c8a1e91b57e9b3af740b54c1dd2
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:0aa976864a18ca26bbb0b64dde8ab1f7
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):2b51bf10a90e84273072326525adb219
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:ca2e3f0f4d8c71c0fd37e77f58d9ae2b
Package / Case:51bf93173785f0f3fc2d8b70cf119689
In Stock: 3000
Stock:
3000 Can Ship Immediately
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