G35N02K

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See Product Specifications

Mfr. #:

G35N02K

Mfr.:

Goford Semiconductor

Описание:

N20V,RD(MAX)<[email protected],RD(MAX)<18

Упаковка:

Tape & Reel (TR)

Datasheet:

G35N02K Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	G35N02K
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Goford Semiconductor
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	1d4b1d1d0414ed964cb9de7f5a150f63
Current - Continuous Drain (Id) @ 25°C:	822fa9074467f53dd633c6786e269596
Drive Voltage (Max Rds On, Min Rds On):	ad55046ae2fc0687ff363bc051e1507d
Rds On (Max) @ Id, Vgs:	ba51162490203ad0b90b21289e91225d
Vgs(th) (Max) @ Id:	b84520e401b6763187bb539da6d1dfbf
Gate Charge (Qg) (Max) @ Vgs:	b308e197d27e92a8a22b511b91259f82
Vgs (Max):	ed5450af4f622d5d61945c0592c793a8
Input Capacitance (Ciss) (Max) @ Vds:	bd8af556cb0d77727c7b3997a713ddd4
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	2aa0e4b96ebad01dba346ba12d8321e6
Operating Temperature:	6a357bb51737d359c8bcaa66995aadb4
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	26334f21813abf4634f508e2476262a0
Package / Case:	d6d5b809beb9f171e5b4097664b4dd95

In Stock: 2380

Stock:

2380 Can Ship Immediately