G06N10

G06N10

Images are for reference only
See Product Specifications

G06N10
Описание:
N100V,RD(MAX)<240M@10V,VTH1.2V~3
Упаковка:
Tape & Reel (TR)
Datasheet:
G06N10 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:G06N10
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Goford Semiconductor
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):227b5c7c7a2ed2ea3da210ed0860030d
Current - Continuous Drain (Id) @ 25°C:d0b1bfd50dd40176f497a2915a6e579b
Drive Voltage (Max Rds On, Min Rds On):336d5ebc5436534e61d16e63ddfca327
Rds On (Max) @ Id, Vgs:f17d9af0cb613439c870778df76065cf
Vgs(th) (Max) @ Id:66756bbbd2b15b665d5248f5ca1758a1
Gate Charge (Qg) (Max) @ Vgs:64237ee968f875d05c674c53927c5449
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:1b757cf73befe9833f5db3799aa16d8c
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):94a8ad895e5fc23a0a273062873afdde
Operating Temperature:57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:514f87a5defc29be7fc6e223fca16578
Package / Case:d6d5b809beb9f171e5b4097664b4dd95
In Stock: 2490
Stock:
2490 Can Ship Immediately
  • Делиться:
Для использования с
IXTT16N50D2
IXTT16N50D2
IXYS
MOSFET N-CH 500V 16A TO268
IXFH30N50P
IXFH30N50P
IXYS
MOSFET N-CH 500V 30A TO247AD
STD8N60DM2
STD8N60DM2
STMicroelectronics
MOSFET N-CH 600V 8A DPAK
SSM6K403TU,LF
SSM6K403TU,LF
Toshiba Semiconductor and Storage
MOSFET N-CH 20V 4.2A UF6
NTBL095N65S3H
NTBL095N65S3H
onsemi
SUPERFET3 FAST 95MOHM TOLL
IRFP240
IRFP240
Vishay Siliconix
MOSFET N-CH 200V 20A TO247-3
IRLBA3803
IRLBA3803
Vishay Siliconix
MOSFET N-CH 30V 179A SUPER-220
IRF7822PBF
IRF7822PBF
Infineon Technologies
MOSFET N-CH 30V 18A 8SO
STP16NS25FP
STP16NS25FP
STMicroelectronics
MOSFET N-CH 250V 16A TO220FP
SI4890DY-T1-GE3
SI4890DY-T1-GE3
Vishay Siliconix
MOSFET N-CH 30V 11A 8-SOIC
BSL716SNH6327XTSA1
BSL716SNH6327XTSA1
Infineon Technologies
MOSFET N-CH 75V 2.5A TSOP-6
TSM340N06CI C0G
TSM340N06CI C0G
Taiwan Semiconductor Corporation
MOSFET N-CH 60V 30A ITO220
Вас также может заинтересовать
G33N03D3
G33N03D3
Goford Semiconductor
N30V,RD(MAX)<12M@10V,RD(MAX)<13M
GT090N06D52
GT090N06D52
Goford Semiconductor
N60V,RD(MAX)<9M@10V,RD(MAX)<13M@
G15N10C
G15N10C
Goford Semiconductor
N100V,RD(MAX)<110M@10V,RD(MAX)<1
G50N03D5
G50N03D5
Goford Semiconductor
N30V,RD(MAX)<4.5M@10V,RD(MAX)<8M
G50N03K
G50N03K
Goford Semiconductor
N30V,RD(MAX)<7M@10V,RD(MAX)<12M@
G60N04K
G60N04K
Goford Semiconductor
N40V,RD(MAX)<7M@10V,RD(MAX)<12M@
G26P04K
G26P04K
Goford Semiconductor
P-40V,RD(MAX)<18M@-10V,RD(MAX)<2
GT100N12T
GT100N12T
Goford Semiconductor
N120V,RD(MAX)<10M@10V,VTH2.5V~3.
2301H
2301H
Goford Semiconductor
P30V,RD(MAX)<[email protected],RD(MAX)<
G06P01E
G06P01E
Goford Semiconductor
P12V,RD(MAX)<[email protected],RD(MAX)<4
GT060N04D3
GT060N04D3
Goford Semiconductor
N40V,RD(MAX)<6.5M@10V,RD(MAX)<10
G110N06T
G110N06T
Goford Semiconductor
N60V,RD(MAX)<6.4M@10V,RD(MAX)<8.