G06N10

G06N10

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G06N10
Описание:
N100V,RD(MAX)<240M@10V,VTH1.2V~3
Упаковка:
Tape & Reel (TR)
Datasheet:
G06N10 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:G06N10
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Goford Semiconductor
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):227b5c7c7a2ed2ea3da210ed0860030d
Current - Continuous Drain (Id) @ 25°C:d0b1bfd50dd40176f497a2915a6e579b
Drive Voltage (Max Rds On, Min Rds On):336d5ebc5436534e61d16e63ddfca327
Rds On (Max) @ Id, Vgs:f17d9af0cb613439c870778df76065cf
Vgs(th) (Max) @ Id:66756bbbd2b15b665d5248f5ca1758a1
Gate Charge (Qg) (Max) @ Vgs:64237ee968f875d05c674c53927c5449
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:1b757cf73befe9833f5db3799aa16d8c
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):94a8ad895e5fc23a0a273062873afdde
Operating Temperature:57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:514f87a5defc29be7fc6e223fca16578
Package / Case:d6d5b809beb9f171e5b4097664b4dd95
In Stock: 2490
Stock:
2490 Can Ship Immediately
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