G30N02T

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See Product Specifications

Mfr. #:

G30N02T

Mfr.:

Goford Semiconductor

Описание:

N20V,RD(MAX)<[email protected],VTH0.5V~1.

Упаковка:

Tube

Datasheet:

G30N02T Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	G30N02T
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Goford Semiconductor
Упаковка:	Tube
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	1d4b1d1d0414ed964cb9de7f5a150f63
Current - Continuous Drain (Id) @ 25°C:	0563dec0a7488306d232b9f76bb0fb19
Drive Voltage (Max Rds On, Min Rds On):	bd7f14ca47e6ffb3fc6ea492f7ea02d5
Rds On (Max) @ Id, Vgs:	ba51162490203ad0b90b21289e91225d
Vgs(th) (Max) @ Id:	b84520e401b6763187bb539da6d1dfbf
Gate Charge (Qg) (Max) @ Vgs:	b8a0640fe9525616e9f66bccd7456bd2
Vgs (Max):	ed5450af4f622d5d61945c0592c793a8
Input Capacitance (Ciss) (Max) @ Vds:	b636b168c745b0a3907c2b286d192cec
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	ee6cd47dfca77e9713af2c0591ecd5e7
Operating Temperature:	6a357bb51737d359c8bcaa66995aadb4
Mounting Type:	506558024381a3c368cb88e9e94f6845
Supplier Device Package:	21023271cb741070ebf3efcc38cc7f20
Package / Case:	46bb638de2ea693de650d7f1c3115468

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Stock:

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