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See Product Specifications
| номер части: | G30N02T |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - FETs, MOSFETs - Single |
| Производитель: | Goford Semiconductor |
| Упаковка: | Tube |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| FET Type: | 43272ae8a787f198ca6b6227abc259ef |
| Technology: | 54a5be1d27124bd4f8897fe25aa94ecc |
| Drain to Source Voltage (Vdss): | 1d4b1d1d0414ed964cb9de7f5a150f63 |
| Current - Continuous Drain (Id) @ 25°C: | 0563dec0a7488306d232b9f76bb0fb19 |
| Drive Voltage (Max Rds On, Min Rds On): | bd7f14ca47e6ffb3fc6ea492f7ea02d5 |
| Rds On (Max) @ Id, Vgs: | ba51162490203ad0b90b21289e91225d |
| Vgs(th) (Max) @ Id: | b84520e401b6763187bb539da6d1dfbf |
| Gate Charge (Qg) (Max) @ Vgs: | b8a0640fe9525616e9f66bccd7456bd2 |
| Vgs (Max): | ed5450af4f622d5d61945c0592c793a8 |
| Input Capacitance (Ciss) (Max) @ Vds: | b636b168c745b0a3907c2b286d192cec |
| FET Feature: | 336d5ebc5436534e61d16e63ddfca327 |
| Power Dissipation (Max): | ee6cd47dfca77e9713af2c0591ecd5e7 |
| Operating Temperature: | 6a357bb51737d359c8bcaa66995aadb4 |
| Mounting Type: | 506558024381a3c368cb88e9e94f6845 |
| Supplier Device Package: | 21023271cb741070ebf3efcc38cc7f20 |
| Package / Case: | 46bb638de2ea693de650d7f1c3115468 |
