GT088N06T

GT088N06T

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GT088N06T
Описание:
N60V,RD(MAX)<9M@10V,RD(MAX)<13M@
Упаковка:
Tube
Datasheet:
GT088N06T Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:GT088N06T
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Goford Semiconductor
Упаковка:Tube
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):5568a11e95c42251b4839598cb5b4518
Current - Continuous Drain (Id) @ 25°C:1551d0db07ff2a9a5117bf21afa2832a
Drive Voltage (Max Rds On, Min Rds On):214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:bf92a970d1105c7b954e8d0cd74f7df9
Vgs(th) (Max) @ Id:604e14281627abaa31ad75dce0e5c80f
Gate Charge (Qg) (Max) @ Vgs:adefe80c4a89824fe268dd1bd0082a35
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:1fb2437daa305cd2a95875ab8cab29b5
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):fc68e31357073b0dee08946ec891c227
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:506558024381a3c368cb88e9e94f6845
Supplier Device Package:21023271cb741070ebf3efcc38cc7f20
Package / Case:46bb638de2ea693de650d7f1c3115468
In Stock: 50
Stock:
50 Can Ship Immediately
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