G23N06K

G23N06K

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G23N06K
Описание:
N60V,RD(MAX)<35M@10V,RD(MAX)<45M
Упаковка:
Tape & Reel (TR)
Datasheet:
G23N06K Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:G23N06K
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Goford Semiconductor
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):5568a11e95c42251b4839598cb5b4518
Current - Continuous Drain (Id) @ 25°C:6775cebcc018699089da38b0edcecfb8
Drive Voltage (Max Rds On, Min Rds On):336d5ebc5436534e61d16e63ddfca327
Rds On (Max) @ Id, Vgs:4eeb398d75a338b1f50508dd826f03f6
Vgs(th) (Max) @ Id:bae68a70e94fb31c33c772f4fdf89b99
Gate Charge (Qg) (Max) @ Vgs:de0812168e822f1110815fd33f6452ea
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:d07ee5678f1f943f7360a5dc12d695f9
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):d0f95aaad9f54920419cb607a3cae481
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:514f87a5defc29be7fc6e223fca16578
Package / Case:d6d5b809beb9f171e5b4097664b4dd95
In Stock: 2490
Stock:
2490 Can Ship Immediately
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