G23N06K

G23N06K

Images are for reference only
See Product Specifications

G23N06K
Описание:
N60V,RD(MAX)<35M@10V,RD(MAX)<45M
Упаковка:
Tape & Reel (TR)
Datasheet:
G23N06K Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:G23N06K
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Goford Semiconductor
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):5568a11e95c42251b4839598cb5b4518
Current - Continuous Drain (Id) @ 25°C:6775cebcc018699089da38b0edcecfb8
Drive Voltage (Max Rds On, Min Rds On):336d5ebc5436534e61d16e63ddfca327
Rds On (Max) @ Id, Vgs:4eeb398d75a338b1f50508dd826f03f6
Vgs(th) (Max) @ Id:bae68a70e94fb31c33c772f4fdf89b99
Gate Charge (Qg) (Max) @ Vgs:de0812168e822f1110815fd33f6452ea
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:d07ee5678f1f943f7360a5dc12d695f9
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):d0f95aaad9f54920419cb607a3cae481
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:514f87a5defc29be7fc6e223fca16578
Package / Case:d6d5b809beb9f171e5b4097664b4dd95
In Stock: 2490
Stock:
2490 Can Ship Immediately
  • Делиться:
Для использования с
FQB3N60CTM
FQB3N60CTM
Fairchild Semiconductor
MOSFET N-CH 600V 3A D2PAK
RFP10N15L
RFP10N15L
Harris Corporation
N-CHANNEL POWER MOSFET
TPIC5424LDW
TPIC5424LDW
Texas Instruments
N-CHANNEL POWER MOSFET
STB80NF55L-08-1
STB80NF55L-08-1
STMicroelectronics
MOSFET N-CH 55V 80A I2PAK
G20N03D2
G20N03D2
Goford Semiconductor
N30V,RD(MAX)<24M@10V,RD(MAX)<29M
FDY300NZ
FDY300NZ
onsemi
MOSFET N-CH 20V 600MA SC89-3
SIJ128LDP-T1-GE3
SIJ128LDP-T1-GE3
Vishay Siliconix
MOSFET N-CH 80V 10.2A/25.5A PPAK
FCH023N65S3L4
FCH023N65S3L4
onsemi
MOSFET N-CH 650V 75A TO247
IRFBC40SPBF
IRFBC40SPBF
Vishay Siliconix
MOSFET N-CH 600V 6.2A D2PAK
STD90N03L-1
STD90N03L-1
STMicroelectronics
MOSFET N-CH 30V 80A IPAK
IPI65R280E6XKSA1
IPI65R280E6XKSA1
Infineon Technologies
MOSFET N-CH 650V 13.8A TO262-3
OT416Q
OT416Q
WeEn Semiconductors
OT416/TO-220F/STANDARD MARKING
Вас также может заинтересовать
G4616
G4616
Goford Semiconductor
N+P/-40V,RD(MAX)<20M@10V,RD(MAX)
03N06
03N06
Goford Semiconductor
N60V,RD(MAX)<100M@10V,RD(MAX)<12
03N06L
03N06L
Goford Semiconductor
N60V,RD(MAX)<100M@10V,RD(MAX)<12
G60N04K
G60N04K
Goford Semiconductor
N40V,RD(MAX)<7M@10V,RD(MAX)<12M@
3400
3400
Goford Semiconductor
N30V,RD(MAX)<27M@10V,RD(MAX)<33M
G01N20LE
G01N20LE
Goford Semiconductor
N200V,RD(MAX)<850M@10V,RD(MAX)<9
G10P03
G10P03
Goford Semiconductor
P30V,RD(MAX)<[email protected],RD(MAX)<3
GT52N10D5
GT52N10D5
Goford Semiconductor
N100V,RD(MAX)<7.5M@10V,RD(MAX)<1
G3035L
G3035L
Goford Semiconductor
P30V,RD(MAX)<59M@-10V,RD(MAX)<75
GC20N65F
GC20N65F
Goford Semiconductor
N650V,RD(MAX)<170M@10V,VTH2.5V~4
GC20N65T
GC20N65T
Goford Semiconductor
N650V,RD(MAX)<170M@10V,VTH2.5V~4
G11S
G11S
Goford Semiconductor
P-20V,RD(MAX)<[email protected],RD(MAX