G23N06K

G23N06K

Images are for reference only
See Product Specifications

G23N06K
Описание:
N60V,RD(MAX)<35M@10V,RD(MAX)<45M
Упаковка:
Tape & Reel (TR)
Datasheet:
G23N06K Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:G23N06K
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Goford Semiconductor
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):5568a11e95c42251b4839598cb5b4518
Current - Continuous Drain (Id) @ 25°C:6775cebcc018699089da38b0edcecfb8
Drive Voltage (Max Rds On, Min Rds On):336d5ebc5436534e61d16e63ddfca327
Rds On (Max) @ Id, Vgs:4eeb398d75a338b1f50508dd826f03f6
Vgs(th) (Max) @ Id:bae68a70e94fb31c33c772f4fdf89b99
Gate Charge (Qg) (Max) @ Vgs:de0812168e822f1110815fd33f6452ea
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:d07ee5678f1f943f7360a5dc12d695f9
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):d0f95aaad9f54920419cb607a3cae481
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:514f87a5defc29be7fc6e223fca16578
Package / Case:d6d5b809beb9f171e5b4097664b4dd95
In Stock: 2490
Stock:
2490 Can Ship Immediately
  • Делиться:
Для использования с
IPU06N03LZG
IPU06N03LZG
Infineon Technologies
N-CHANNEL POWER MOSFET
IRFS3806TRLPBF
IRFS3806TRLPBF
Infineon Technologies
MOSFET N-CH 60V 43A D2PAK
PMV164ENEAR
PMV164ENEAR
Nexperia USA Inc.
MOSFET N-CH 60V 1.6A TO236AB
STL3N65M2
STL3N65M2
STMicroelectronics
MOSFET N-CH 650V 2.3A POWERFLAT
IRFI530GPBF
IRFI530GPBF
Vishay Siliconix
MOSFET N-CH 100V 9.7A TO220-3
IRF624PBF
IRF624PBF
Vishay Siliconix
MOSFET N-CH 250V 4.4A TO220AB
STH240N10F7-2
STH240N10F7-2
STMicroelectronics
MOSFET N-CH 100V 180A H2PAK-2
IRLR7807ZTRPBF
IRLR7807ZTRPBF
Infineon Technologies
MOSFET N-CH 30V 43A DPAK
NTD23N03R-1G
NTD23N03R-1G
onsemi
MOSFET N-CH 25V 3.8A/17.1A IPAK
STS6PF30L
STS6PF30L
STMicroelectronics
MOSFET P-CH 30V 6A 8SO
SPP07N65C3HKSA1
SPP07N65C3HKSA1
Infineon Technologies
MOSFET N-CH 650V 7.3A TO220-3
IRF3704ZCSTRLP
IRF3704ZCSTRLP
Infineon Technologies
MOSFET N-CH 20V 67A D2PAK
Вас также может заинтересовать
G33N03D3
G33N03D3
Goford Semiconductor
N30V,RD(MAX)<12M@10V,RD(MAX)<13M
G4616
G4616
Goford Semiconductor
N+P/-40V,RD(MAX)<20M@10V,RD(MAX)
G06N10
G06N10
Goford Semiconductor
N100V,RD(MAX)<240M@10V,VTH1.2V~3
G01N20LE
G01N20LE
Goford Semiconductor
N200V,RD(MAX)<850M@10V,RD(MAX)<9
GC20N65T
GC20N65T
Goford Semiconductor
N650V,RD(MAX)<170M@10V,VTH2.5V~4
GT100N12D5
GT100N12D5
Goford Semiconductor
N120V,RD(MAX)<10M@10V,VTH2.5V~3.
G75P04K
G75P04K
Goford Semiconductor
P40V,RD(MAX)<10M@-10V,VTH-1.2V~-
G65P06D5
G65P06D5
Goford Semiconductor
P60V,RD(MAX)<18M@-10V,VTH-2V~-3V
G50N03J
G50N03J
Goford Semiconductor
N30V,RD(MAX)<7M@10V,RD(MAX)<12M@
630AT
630AT
Goford Semiconductor
N200V,RD(MAX)<250M@10V,RD(MAX)<3
G70N04T
G70N04T
Goford Semiconductor
N40V,RD(MAX)<7M@10V,RD(MAX)<12M@
18N20
18N20
Goford Semiconductor
N 200V, RD(MAX)<0.16@10V,VTH1.0V