G1003B

G1003B

Images are for reference only
See Product Specifications

G1003B
Описание:
N100V,RD(MAX)<170M@10V,RD(MAX)<1
Упаковка:
Tape & Reel (TR)
Datasheet:
G1003B Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:G1003B
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Goford Semiconductor
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):227b5c7c7a2ed2ea3da210ed0860030d
Current - Continuous Drain (Id) @ 25°C:657dae0913ee12be6fb2a6f687aae1c7
Drive Voltage (Max Rds On, Min Rds On):336d5ebc5436534e61d16e63ddfca327
Rds On (Max) @ Id, Vgs:cd72edfc2b21e7ee70bd9411b671b416
Vgs(th) (Max) @ Id:47646805bddee9d06a7f0cc80c73c037
Gate Charge (Qg) (Max) @ Vgs:39352bee88f42a0566529683068d49d4
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:e2d818a58a4c5dbff5fe2f58dd5a78fe
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):fd0d0697ccdad0f38fa863f5334d2d24
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:ca2e3f0f4d8c71c0fd37e77f58d9ae2b
Package / Case:51bf93173785f0f3fc2d8b70cf119689
In Stock: 2378
Stock:
2378 Can Ship Immediately
  • Делиться:
Для использования с
SCH1302-TL-E
SCH1302-TL-E
onsemi
MOSFET P-CH 20V 2A 6SCH
NTE2380
NTE2380
NTE Electronics, Inc
MOSFET N-CHANNEL 500V 2.5A TO220
SUD08P06-155L-GE3
SUD08P06-155L-GE3
Vishay Siliconix
MOSFET P-CH 60V 8.4A TO252
BSC039N06NSATMA1
BSC039N06NSATMA1
Infineon Technologies
MOSFET N-CH 60V 19A/100A TDSON
BSC118N10NSGATMA1
BSC118N10NSGATMA1
Infineon Technologies
MOSFET N-CH 100V 11A/71A TDSON
BS170-D26Z
BS170-D26Z
onsemi
MOSFET N-CH 60V 500MA TO92-3
SIS108DN-T1-GE3
SIS108DN-T1-GE3
Vishay Siliconix
MOSFET N-CH 80V 6.7A/16A PPAK
APTM20DAM04G
APTM20DAM04G
Microchip Technology
MOSFET N-CH 200V 372A SP6
FQD17P06TF
FQD17P06TF
onsemi
MOSFET P-CH 60V 12A DPAK
2SJ360(TE12L,F)
2SJ360(TE12L,F)
Toshiba Semiconductor and Storage
MOSFET P-CH 60V 1A PW-MINI
TPC8092,LQ(S
TPC8092,LQ(S
Toshiba Semiconductor and Storage
MOSFET N-CH 30V 15A 8SOP
IRLR3802TRPBF
IRLR3802TRPBF
Infineon Technologies
MOSFET N-CH 12V 84A DPAK
Вас также может заинтересовать
G4616
G4616
Goford Semiconductor
N+P/-40V,RD(MAX)<20M@10V,RD(MAX)
1002
1002
Goford Semiconductor
N100V,RD(MAX)<250M@10V,RD(MAX)<2
G1003B
G1003B
Goford Semiconductor
N100V,RD(MAX)<170M@10V,RD(MAX)<1
G29
G29
Goford Semiconductor
P15V,RD(MAX)<[email protected],RD(MAX)<4
G09P02L
G09P02L
Goford Semiconductor
P20V,RD(MAX)<[email protected],RD(MAX)<3
GC11N65K
GC11N65K
Goford Semiconductor
N650V,RD(MAX)<360M@10V,VTH2.5V~4
GT025N06D5
GT025N06D5
Goford Semiconductor
N60V,RD(MAX)<2.7M@10V,RD(MAX)<3.
G15N06K
G15N06K
Goford Semiconductor
N-CH, 60V,15A,RD(MAX)<45M@10V,RD
G30N04D3
G30N04D3
Goford Semiconductor
MOSFET N-CH 40V 30A DFN33-8L
45P40
45P40
Goford Semiconductor
P40V,RD(MAX)<14M@-10V,VTH2V~3V T
GT105N10T
GT105N10T
Goford Semiconductor
N100V,RD(MAX)<10.5M@10V,RD(MAX)<
18N20
18N20
Goford Semiconductor
N 200V, RD(MAX)<0.16@10V,VTH1.0V