GT025N06D5

GT025N06D5

Images are for reference only
See Product Specifications

GT025N06D5
Описание:
N60V,RD(MAX)<2.7M@10V,RD(MAX)<3.
Упаковка:
Tape & Reel (TR)
Datasheet:
GT025N06D5 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:GT025N06D5
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Goford Semiconductor
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):5568a11e95c42251b4839598cb5b4518
Current - Continuous Drain (Id) @ 25°C:c25c400314a78e900d3a33a85b69e35d
Drive Voltage (Max Rds On, Min Rds On):214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:430ba16924fb122ef69fa0085d83e0c7
Vgs(th) (Max) @ Id:bae68a70e94fb31c33c772f4fdf89b99
Gate Charge (Qg) (Max) @ Vgs:e3fca9908725a53619159586219e03be
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:ee7b1effb57a0e99bd8a92242482e43c
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):ce5340b24141d0946f2d6a52045d3c27
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:17087e8d76273a63aa287b61d071f602
Package / Case:7f82de9f5c66f9f803bc2f6ee2b90c1b
In Stock: 125
Stock:
125 Can Ship Immediately
  • Делиться:
Для использования с
NTQD4154ZR2G
NTQD4154ZR2G
onsemi
N-CHANNEL POWER MOSFET
RJJ0621DPP-0P#T2
RJJ0621DPP-0P#T2
Renesas Electronics America Inc
P-CHANNEL POWER MOSFET
IXTP120N075T2
IXTP120N075T2
IXYS
MOSFET N-CH 75V 120A TO220AB
DMTH10H010SPS-13
DMTH10H010SPS-13
Diodes Incorporated
MOSFET N-CH 100V PWRDI5060
TPC8129,LQ(S
TPC8129,LQ(S
Toshiba Semiconductor and Storage
MOSFET P-CH 30V 9A 8SOP
IRF1010ZS
IRF1010ZS
Infineon Technologies
MOSFET N-CH 55V 75A D2PAK
SPB80N06S2L-05
SPB80N06S2L-05
Infineon Technologies
MOSFET N-CH 55V 80A TO263-3
NTMFS4H013NFT1G
NTMFS4H013NFT1G
onsemi
MOSFET N-CH 25V 43A/269A 5DFN
IPU80R2K8CEAKMA1
IPU80R2K8CEAKMA1
Infineon Technologies
MOSFET N-CH 800V 1.9A TO251-3
IXTA110N12T2
IXTA110N12T2
IXYS
MOSFET N-CH 120V 110A TO263
CMS16P06D-HF
CMS16P06D-HF
Comchip Technology
MOSFET P-CH 60V DPAK
SSM3J118TU,LF
SSM3J118TU,LF
Toshiba Semiconductor and Storage
PB-F SMALL LOW ON RESISTANCE PCH
Вас также может заинтересовать
G4953S
G4953S
Goford Semiconductor
P+P -30V,RD(MAX)<60M@-10V,RD(MAX
G06NP06S2
G06NP06S2
Goford Semiconductor
N/P60V,RD(MAX)<35M@10V,RD(MAX)<4
GT090N06D52
GT090N06D52
Goford Semiconductor
N60V,RD(MAX)<9M@10V,RD(MAX)<13M@
G5P40L
G5P40L
Goford Semiconductor
P40V,RD(MAX)<85M@-10V,RD(MAX)<12
G35N02K
G35N02K
Goford Semiconductor
N20V,RD(MAX)<[email protected],RD(MAX)<18
G60N04K
G60N04K
Goford Semiconductor
N40V,RD(MAX)<7M@10V,RD(MAX)<12M@
G2304
G2304
Goford Semiconductor
MOSFET N-CH 30V 3.6A SOT-23
GT100N12D5
GT100N12D5
Goford Semiconductor
N120V,RD(MAX)<10M@10V,VTH2.5V~3.
GT060N04D3
GT060N04D3
Goford Semiconductor
N40V,RD(MAX)<6.5M@10V,RD(MAX)<10
G30N02T
G30N02T
Goford Semiconductor
N20V,RD(MAX)<[email protected],VTH0.5V~1.
630AT
630AT
Goford Semiconductor
N200V,RD(MAX)<250M@10V,RD(MAX)<3
GT088N06T
GT088N06T
Goford Semiconductor
N60V,RD(MAX)<9M@10V,RD(MAX)<13M@