TPC8129,LQ(S

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See Product Specifications

Mfr. #:

TPC8129,LQ(S

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET P-CH 30V 9A 8SOP

Упаковка:

Tape & Reel (TR)

Datasheet:

TPC8129,LQ(S Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TPC8129,LQ(S
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	9945a529f9f3f7e23d6cd49cab56133a
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	6f065265b5ad79aa8b78335bb14c6420
Current - Continuous Drain (Id) @ 25°C:	8eb8529018c5d32af4812ca4c4cabfa9
Drive Voltage (Max Rds On, Min Rds On):	214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:	fbfdae908d261090e803a3061e6fdf27
Vgs(th) (Max) @ Id:	43c1a46f06a636cd1e8fd2338949c0dd
Gate Charge (Qg) (Max) @ Vgs:	1c2591769ca12fd398ae23dd26f13ec6
Vgs (Max):	3c81c5d94681cbb93e31f6893f8db947
Input Capacitance (Ciss) (Max) @ Vds:	f10c95142301e441e988732b6749e550
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	4c6a955db65e87d580766aee735f1644
Operating Temperature:	a05f788eae82918882d3b91ce435570b
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	fe7cbfc5c8dc998814597054b009cbc7
Package / Case:	f80d2dd5409d1e9f8a546eb6d6a8728d