TK8S06K3L(T6L1,NQ)

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Mfr. #:

TK8S06K3L(T6L1,NQ)

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET N-CH 60V 8A DPAK

Упаковка:

Tape & Reel (TR)

Datasheet:

TK8S06K3L(T6L1,NQ) Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TK8S06K3L(T6L1,NQ)
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	5568a11e95c42251b4839598cb5b4518
Current - Continuous Drain (Id) @ 25°C:	3f9b80b2313763e17eb9d4414601dfee
Drive Voltage (Max Rds On, Min Rds On):	9271e32297e2bbc49bb4aadcd764fb6f
Rds On (Max) @ Id, Vgs:	b1a89b0f03fcd54aedb74d2b2bd35215
Vgs(th) (Max) @ Id:	2da3540dbfa7d901b7d797a5001bb2e7
Gate Charge (Qg) (Max) @ Vgs:	9a935c8a1e91b57e9b3af740b54c1dd2
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	b9db85367939136a6e23dc8b21999ef8
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	8205ca17d37170c3e6106db260b4f4b6
Operating Temperature:	dfb4ad46e1ac805451b8f397e97630b4
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	0a914331c901d37ac7c2db598fa12b21
Package / Case:	d6d5b809beb9f171e5b4097664b4dd95