G2304

G2304

Images are for reference only
See Product Specifications

G2304
Описание:
MOSFET N-CH 30V 3.6A SOT-23
Упаковка:
Tape & Reel (TR)
Datasheet:
G2304 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:G2304
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Goford Semiconductor
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):6f065265b5ad79aa8b78335bb14c6420
Current - Continuous Drain (Id) @ 25°C:c985a4ecf583f7bf51241a68fb32b769
Drive Voltage (Max Rds On, Min Rds On):214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:e2ebab8231df9a66d0aa0d532408e67a
Vgs(th) (Max) @ Id:17ed95a87d7b17ee9a8302d07765c7da
Gate Charge (Qg) (Max) @ Vgs:1ff1dbd39efbf5286aa9659ca69339eb
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:dd458d337da6cd9af30d46d8b2a10294
FET Feature:eb6d8ae6f20283755b339c0dc273988b
Power Dissipation (Max):c3495bb180ab9b6d6d48ebcdaa87f2e9
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:581cdcc7e1a235fe3e919028055e9e50
Package / Case:51bf93173785f0f3fc2d8b70cf119689
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
HUF75329D3S
HUF75329D3S
Fairchild Semiconductor
MOSFET N-CH 55V 20A TO252AA
NVD3055-150T4G-VF01
NVD3055-150T4G-VF01
onsemi
MOSFET N-CH 60V 9A DPAK
IRFR420TRPBF-BE3
IRFR420TRPBF-BE3
Vishay Siliconix
MOSFET N-CH 500V 2.4A DPAK
IRFR010PBF-BE3
IRFR010PBF-BE3
Vishay Siliconix
MOSFET N-CH 50V 8.2A DPAK
DMN63D1L-13
DMN63D1L-13
Diodes Incorporated
MOSFET N-CH 60V 380MA SOT23
YJD20N06A-F1-0000HF
YJD20N06A-F1-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
N-CH MOSFET 60V 20A TO-252
SPD07N60C3T
SPD07N60C3T
Infineon Technologies
MOSFET N-CH 650V 7.3A TO252-3
IRF8252PBF
IRF8252PBF
Infineon Technologies
MOSFET N-CH 25V 25A 8SO
STI35N65M5
STI35N65M5
STMicroelectronics
MOSFET N-CH 650V 27A I2PAK
2SJ438(CANO,A,Q)
2SJ438(CANO,A,Q)
Toshiba Semiconductor and Storage
MOSFET P-CH TO220NIS
FDP032N08-F102
FDP032N08-F102
onsemi
MOSFET N-CHANNEL 75V 120A TO220
SQ7414AENW-T1_GE3
SQ7414AENW-T1_GE3
Vishay Siliconix
MOSFET N-CH 60V 18A PPAK1212-8
Вас также может заинтересовать
G2312
G2312
Goford Semiconductor
N20V,RD(MAX)<18M@10V,RD(MAX)<20M
G5P40L
G5P40L
Goford Semiconductor
P40V,RD(MAX)<85M@-10V,RD(MAX)<12
G33N03S
G33N03S
Goford Semiconductor
N30V,RD(MAX)<12M@10V,RD(MAX)<13M
G28N03D3
G28N03D3
Goford Semiconductor
N30V,RD(MAX)<12M@10V,RD(MAX)<18M
G06N06S
G06N06S
Goford Semiconductor
N60V,RD(MAX)<22M@10V,RD(MAX)<35M
G1003A
G1003A
Goford Semiconductor
N100V,RD(MAX)<210M@10V,RD(MAX)<2
3415A
3415A
Goford Semiconductor
P20V,RD(MAX)<[email protected],RD(MAX)<6
G60N10T
G60N10T
Goford Semiconductor
N100V,RD(MAX)<25M@10V,RD(MAX)<30
2301H
2301H
Goford Semiconductor
P30V,RD(MAX)<[email protected],RD(MAX)<
G26P04D5
G26P04D5
Goford Semiconductor
P40V,RD(MAX)<18M@-10V,RD(MAX)<22
G15N06K
G15N06K
Goford Semiconductor
N-CH, 60V,15A,RD(MAX)<45M@10V,RD
630A
630A
Goford Semiconductor
N200V,RD(MAX)<280M@10V,VTH1V~3V,