2301H

2301H

Images are for reference only
See Product Specifications

2301H
Описание:
P30V,RD(MAX)<[email protected],RD(MAX)<
Упаковка:
Tape & Reel (TR)
Datasheet:
2301H Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:2301H
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Goford Semiconductor
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:9945a529f9f3f7e23d6cd49cab56133a
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):6f065265b5ad79aa8b78335bb14c6420
Current - Continuous Drain (Id) @ 25°C:49be2d3befbb5f287b3239b421243897
Drive Voltage (Max Rds On, Min Rds On):214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:5ef8f6aba7e5c094bae6a2329993c851
Vgs(th) (Max) @ Id:47646805bddee9d06a7f0cc80c73c037
Gate Charge (Qg) (Max) @ Vgs:d3df124a57f2fdd98e6f5e10fae9ec54
Vgs (Max):ed5450af4f622d5d61945c0592c793a8
Input Capacitance (Ciss) (Max) @ Vds:4c20c7d93500e3ecfafd16ddbaeedf19
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):4c6a955db65e87d580766aee735f1644
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:581cdcc7e1a235fe3e919028055e9e50
Package / Case:51bf93173785f0f3fc2d8b70cf119689
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
UPA2790GR-E1-A
UPA2790GR-E1-A
Renesas Electronics America Inc
P-CHANNEL POWER MOSFET
BSF030NE2LQXUMA1
BSF030NE2LQXUMA1
Infineon Technologies
MOSFET N-CH 25V 24A/75A 2WDSON
STL12P6F6
STL12P6F6
STMicroelectronics
MOSFET P-CH 60V 4A POWERFLAT
STW50N65DM6
STW50N65DM6
STMicroelectronics
MOSFET N-CH 650V 33A TO247-3
IRFHM8334TRPBF-INF
IRFHM8334TRPBF-INF
Infineon Technologies
MOSFET N-CH 30V 13A/43A 8PQFN DL
NVMFS5C442NLAFT1G
NVMFS5C442NLAFT1G
onsemi
MOSFET N-CH 40V 29A/130A 5DFN
FQP14N30
FQP14N30
onsemi
MOSFET N-CH 300V 14.4A TO220-3
IRF3515STRR
IRF3515STRR
Infineon Technologies
MOSFET N-CH 150V 41A D2PAK
IRF3707STRR
IRF3707STRR
Infineon Technologies
MOSFET N-CH 30V 62A D2PAK
NTMSD2P102LR2G
NTMSD2P102LR2G
onsemi
MOSFET P-CH 20V 2.3A 8SOIC
STD30NE06LT4
STD30NE06LT4
STMicroelectronics
MOSFET N-CH 60V 30A DPAK
APT4012BVRG
APT4012BVRG
Microsemi Corporation
MOSFET N-CH 400V 37A TO247AD
Вас также может заинтересовать
1002
1002
Goford Semiconductor
N100V,RD(MAX)<250M@10V,RD(MAX)<2
G05P06L
G05P06L
Goford Semiconductor
P60V,RD(MAX)<120M@-10V,RD(MAX)<1
G33N03S
G33N03S
Goford Semiconductor
N30V,RD(MAX)<12M@10V,RD(MAX)<13M
G10N10A
G10N10A
Goford Semiconductor
N100V,RD(MAX)130mOHM@10V,TO-252
G26P04K
G26P04K
Goford Semiconductor
P-40V,RD(MAX)<18M@-10V,RD(MAX)<2
G48N03D3
G48N03D3
Goford Semiconductor
N30V,RD(MAX)<6M@10V,RD(MAX)<8M@4
GT060N04D3
GT060N04D3
Goford Semiconductor
N40V,RD(MAX)<6.5M@10V,RD(MAX)<10
25P06
25P06
Goford Semiconductor
P60V,RD(MAX)<45M@-10V,VTH2V~3V T
45P40
45P40
Goford Semiconductor
P40V,RD(MAX)<14M@-10V,VTH2V~3V T
G100N03D5
G100N03D5
Goford Semiconductor
N-CH, 30V, 100A, RD(MAX)<3.5M@10
630AT
630AT
Goford Semiconductor
N200V,RD(MAX)<250M@10V,RD(MAX)<3
G110N06T
G110N06T
Goford Semiconductor
N60V,RD(MAX)<6.4M@10V,RD(MAX)<8.