2301H

2301H

Images are for reference only
See Product Specifications

2301H
Описание:
P30V,RD(MAX)<[email protected],RD(MAX)<
Упаковка:
Tape & Reel (TR)
Datasheet:
2301H Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:2301H
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Goford Semiconductor
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:9945a529f9f3f7e23d6cd49cab56133a
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):6f065265b5ad79aa8b78335bb14c6420
Current - Continuous Drain (Id) @ 25°C:49be2d3befbb5f287b3239b421243897
Drive Voltage (Max Rds On, Min Rds On):214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:5ef8f6aba7e5c094bae6a2329993c851
Vgs(th) (Max) @ Id:47646805bddee9d06a7f0cc80c73c037
Gate Charge (Qg) (Max) @ Vgs:d3df124a57f2fdd98e6f5e10fae9ec54
Vgs (Max):ed5450af4f622d5d61945c0592c793a8
Input Capacitance (Ciss) (Max) @ Vds:4c20c7d93500e3ecfafd16ddbaeedf19
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):4c6a955db65e87d580766aee735f1644
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:581cdcc7e1a235fe3e919028055e9e50
Package / Case:51bf93173785f0f3fc2d8b70cf119689
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
2SJ471-E
2SJ471-E
Renesas Electronics America Inc
POWER MOSFET
NTD20N06LT4G
NTD20N06LT4G
onsemi
MOSFET N-CH 60V 20A DPAK
DMP10H400SEQ-13
DMP10H400SEQ-13
Diodes Incorporated
MOSFET P-CH 100V 2.3A/6A SOT223
BUK9Y15-100E,115
BUK9Y15-100E,115
Nexperia USA Inc.
MOSFET N-CH 100V 69A LFPAK56
PJQ5463A_R2_00001
PJQ5463A_R2_00001
Panjit International Inc.
60V P-CHANNEL ENHANCEMENT MODE M
IRFR48ZTRPBF
IRFR48ZTRPBF
Infineon Technologies
MOSFET N-CH 55V 42A DPAK
IPW90R1K0C3
IPW90R1K0C3
Infineon Technologies
N-CHANNEL POWER MOSFET
MTM232230L
MTM232230L
Panasonic Electronic Components
MOSFET N-CH 20V 4.5A SMINI3-G1
IPP12CN10N G
IPP12CN10N G
Infineon Technologies
MOSFET N-CH 100V 67A TO220-3
AON6526
AON6526
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 30V 24A/32A 8DFN
AON6400L
AON6400L
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 30V 8DFN
BUK9E4R4-40B,127
BUK9E4R4-40B,127
NXP USA Inc.
MOSFET N-CH 40V 75A I2PAK
Вас также может заинтересовать
G33N03D3
G33N03D3
Goford Semiconductor
N30V,RD(MAX)<12M@10V,RD(MAX)<13M
G2312
G2312
Goford Semiconductor
N20V,RD(MAX)<18M@10V,RD(MAX)<20M
GT1003D
GT1003D
Goford Semiconductor
N100V,RD(MAX)<130M@10V,RD(MAX)<1
GT55N06D5
GT55N06D5
Goford Semiconductor
N60V,RD(MAX)<8M@10V,RD(MAX)<13M@
GC11N65T
GC11N65T
Goford Semiconductor
N650V,RD(MAX)<360M@10V,VTH2.5V~4
GC11N65F
GC11N65F
Goford Semiconductor
N650V,RD(MAX)<360M@10V,VTH2.5V~4
GC20N65F
GC20N65F
Goford Semiconductor
N650V,RD(MAX)<170M@10V,VTH2.5V~4
G06P01E
G06P01E
Goford Semiconductor
P12V,RD(MAX)<[email protected],RD(MAX)<4
06N06L
06N06L
Goford Semiconductor
N60V,RD(MAX)<42M@10V,RD(MAX)<46M
GT060N04D3
GT060N04D3
Goford Semiconductor
N40V,RD(MAX)<6.5M@10V,RD(MAX)<10
G50N03J
G50N03J
Goford Semiconductor
N30V,RD(MAX)<7M@10V,RD(MAX)<12M@
G110N06T
G110N06T
Goford Semiconductor
N60V,RD(MAX)<6.4M@10V,RD(MAX)<8.