630A

630A

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630A
Описание:
N200V,RD(MAX)<280M@10V,VTH1V~3V,
Упаковка:
Tape & Reel (TR)
Datasheet:
630A Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:630A
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Goford Semiconductor
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):b86aa01bc1f9484a191794819edcfc06
Current - Continuous Drain (Id) @ 25°C:4031d16f69847588e8c8cb7950a72a47
Drive Voltage (Max Rds On, Min Rds On):76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:945fc1f52d3ec48dab42a25028a5ca18
Vgs(th) (Max) @ Id:66756bbbd2b15b665d5248f5ca1758a1
Gate Charge (Qg) (Max) @ Vgs:b5d9a88a12c42c692d6c76ef2e38256e
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:1666a189cd5576c170ec9d6c86debf8a
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):9af97543caf94dfe24ff9b0ccb2c5c0a
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:506558024381a3c368cb88e9e94f6845
Supplier Device Package:514f87a5defc29be7fc6e223fca16578
Package / Case:54e97b06ca67f0676121b669811db9d1
In Stock: 2500
Stock:
2500 Can Ship Immediately
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630A
630A
Goford Semiconductor
N200V,RD(MAX)<280M@10V,VTH1V~3V,