G01N20LE

G01N20LE

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G01N20LE
Описание:
N200V,RD(MAX)<850M@10V,RD(MAX)<9
Упаковка:
Tape & Reel (TR)
Datasheet:
G01N20LE Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:G01N20LE
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Goford Semiconductor
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):b86aa01bc1f9484a191794819edcfc06
Current - Continuous Drain (Id) @ 25°C:d30868f86c622a9f354d063c81ccb079
Drive Voltage (Max Rds On, Min Rds On):214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:eb6fc886bc1fdeba06e40c652513ae96
Vgs(th) (Max) @ Id:bae68a70e94fb31c33c772f4fdf89b99
Gate Charge (Qg) (Max) @ Vgs:db83709cc1aa640e30cdddd177064057
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:a8edaaa3c286966ae6f411587dd38ee3
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):79ced615889a336e16193ff026970ba9
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:581cdcc7e1a235fe3e919028055e9e50
Package / Case:51bf93173785f0f3fc2d8b70cf119689
In Stock: 0
Stock:
0 Can Ship Immediately
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