G60N10T

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See Product Specifications

Mfr. #:

G60N10T

Mfr.:

Goford Semiconductor

Описание:

N100V,RD(MAX)<25M@10V,RD(MAX)<30

Упаковка:

Tube

Datasheet:

G60N10T Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	G60N10T
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Goford Semiconductor
Упаковка:	Tube
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	227b5c7c7a2ed2ea3da210ed0860030d
Current - Continuous Drain (Id) @ 25°C:	1551d0db07ff2a9a5117bf21afa2832a
Drive Voltage (Max Rds On, Min Rds On):	214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:	77ec05bf48c0b280919f4644e145e288
Vgs(th) (Max) @ Id:	bae68a70e94fb31c33c772f4fdf89b99
Gate Charge (Qg) (Max) @ Vgs:	7fe1ed0ddd2c3fd70ae194137735546c
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	01db46d65b45c4d00a78bc65caaaa955
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	1560ac64a5b2f58de232072cf8a3c3f1
Operating Temperature:	6a357bb51737d359c8bcaa66995aadb4
Mounting Type:	506558024381a3c368cb88e9e94f6845
Supplier Device Package:	21023271cb741070ebf3efcc38cc7f20
Package / Case:	46bb638de2ea693de650d7f1c3115468

In Stock: 215

Stock:

215 Can Ship Immediately