G2012

G2012

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G2012
Описание:
N20V,RD(MAX)<[email protected],RD(MAX)<18
Упаковка:
Tape & Reel (TR)
Datasheet:
G2012 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:G2012
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Goford Semiconductor
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):1d4b1d1d0414ed964cb9de7f5a150f63
Current - Continuous Drain (Id) @ 25°C:c98954c6bcd184452c80864782c9ab71
Drive Voltage (Max Rds On, Min Rds On):ad55046ae2fc0687ff363bc051e1507d
Rds On (Max) @ Id, Vgs:110b5698bf1d008c41cf293d4bd878dd
Vgs(th) (Max) @ Id:fb74aa2ff10bb77cff79f565b135beed
Gate Charge (Qg) (Max) @ Vgs:adefee2be820ef0364f2851d0e700f1e
Vgs (Max):10c38ebf444fc04b1bb74eda03c48b9f
Input Capacitance (Ciss) (Max) @ Vds:05b1aa50f2802549ad7b8ad1d20e4b6b
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):79ced615889a336e16193ff026970ba9
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:55fad8b055c7e815c4a686c4a7dc6792
Package / Case:5ca2465698459a103daf1ec0ae24ba5d
In Stock: 3000
Stock:
3000 Can Ship Immediately
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