G2012

G2012

Images are for reference only
See Product Specifications

G2012
Описание:
N20V,RD(MAX)<[email protected],RD(MAX)<18
Упаковка:
Tape & Reel (TR)
Datasheet:
G2012 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:G2012
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Goford Semiconductor
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):1d4b1d1d0414ed964cb9de7f5a150f63
Current - Continuous Drain (Id) @ 25°C:c98954c6bcd184452c80864782c9ab71
Drive Voltage (Max Rds On, Min Rds On):ad55046ae2fc0687ff363bc051e1507d
Rds On (Max) @ Id, Vgs:110b5698bf1d008c41cf293d4bd878dd
Vgs(th) (Max) @ Id:fb74aa2ff10bb77cff79f565b135beed
Gate Charge (Qg) (Max) @ Vgs:adefee2be820ef0364f2851d0e700f1e
Vgs (Max):10c38ebf444fc04b1bb74eda03c48b9f
Input Capacitance (Ciss) (Max) @ Vds:05b1aa50f2802549ad7b8ad1d20e4b6b
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):79ced615889a336e16193ff026970ba9
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:55fad8b055c7e815c4a686c4a7dc6792
Package / Case:5ca2465698459a103daf1ec0ae24ba5d
In Stock: 3000
Stock:
3000 Can Ship Immediately
  • Делиться:
Для использования с
IPB123N10N3GATMA1
IPB123N10N3GATMA1
Infineon Technologies
MOSFET N-CH 100V 58A D2PAK
IRLZ44PBF
IRLZ44PBF
Vishay Siliconix
MOSFET N-CH 60V 50A TO220AB
FDS8878
FDS8878
Fairchild Semiconductor
POWER FIELD-EFFECT TRANSISTOR, 1
BUK6212-40C,118
BUK6212-40C,118
NXP Semiconductors
NEXPERIA BUK6212-40C - 50A, 40V,
SIA429DJT-T1-GE3
SIA429DJT-T1-GE3
Vishay Siliconix
MOSFET P-CH 20V 12A PPAK SC70-6
IPS70R1K4P7SAKMA1
IPS70R1K4P7SAKMA1
Infineon Technologies
MOSFET N-CH 700V 4A TO251-3
IRLR8729TRLPBF
IRLR8729TRLPBF
Infineon Technologies
MOSFET N-CH 30V 58A D-PAK
SPW52N50C3XK
SPW52N50C3XK
Infineon Technologies
SPW52N50 - 500V COOLMOS N-CHANNE
IRFP354PBF
IRFP354PBF
Vishay Siliconix
MOSFET N-CH 450V 14A TO247-3
IPB14N03LAT
IPB14N03LAT
Infineon Technologies
MOSFET N-CH 25V 30A TO263-3
IPU075N03L G
IPU075N03L G
Infineon Technologies
MOSFET N-CH 30V 50A TO251-3
PHP21N06LT,127
PHP21N06LT,127
NXP USA Inc.
MOSFET N-CH 55V 19A TO220AB
Вас также может заинтересовать
G4953S
G4953S
Goford Semiconductor
P+P -30V,RD(MAX)<60M@-10V,RD(MAX
G20N06D52
G20N06D52
Goford Semiconductor
N60V,RD(MAX)<30M@10V,RD(MAX)<40M
3400L
3400L
Goford Semiconductor
N30V,RD(MAX)<27M@10V,RD(MAX)<33M
9926
9926
Goford Semiconductor
N20V,RD(MAX)<[email protected],RD(MAX)<30
G7P03S
G7P03S
Goford Semiconductor
P30V,RD(MAX)<22M@-10V,RD(MAX)<33
G2012
G2012
Goford Semiconductor
N20V,RD(MAX)<[email protected],RD(MAX)<18
G20P08K
G20P08K
Goford Semiconductor
P-80V,RD(MAX)<62M@-10V,RD(MAX)<7
GC11N65T
GC11N65T
Goford Semiconductor
N650V,RD(MAX)<360M@10V,VTH2.5V~4
G6P06
G6P06
Goford Semiconductor
P60V,RD(MAX)<96M@-10V,RD(MAX)<14
630A
630A
Goford Semiconductor
N200V,RD(MAX)<280M@10V,VTH1V~3V,
G50N03J
G50N03J
Goford Semiconductor
N30V,RD(MAX)<7M@10V,RD(MAX)<12M@
G65P06F
G65P06F
Goford Semiconductor
P-CH, -60V, 65A, RD(MAX)<18M@-10