G7P03S

G7P03S

Images are for reference only
See Product Specifications

G7P03S
Описание:
P30V,RD(MAX)<22M@-10V,RD(MAX)<33
Упаковка:
Tape & Reel (TR)
Datasheet:
G7P03S Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:G7P03S
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Goford Semiconductor
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:9945a529f9f3f7e23d6cd49cab56133a
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):6f065265b5ad79aa8b78335bb14c6420
Current - Continuous Drain (Id) @ 25°C:4273bf5e13cf29d12c53ae77b787e55d
Drive Voltage (Max Rds On, Min Rds On):214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:3d2a85cc2ab2ec84b93643a7fc236685
Vgs(th) (Max) @ Id:47646805bddee9d06a7f0cc80c73c037
Gate Charge (Qg) (Max) @ Vgs:800e29c986d4a04b07882baf80ede18b
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:36245676c2fb1c3362ba82582d8ec02f
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):d5667524d53073c9125a5bf35b6eb1dc
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:fe7cbfc5c8dc998814597054b009cbc7
Package / Case:f80d2dd5409d1e9f8a546eb6d6a8728d
In Stock: 4000
Stock:
4000 Can Ship Immediately
  • Делиться:
Для использования с
IXFP36N20X3
IXFP36N20X3
IXYS
MOSFET N-CH 200V 36A TO220
SIR4606DP-T1-GE3
SIR4606DP-T1-GE3
Vishay Siliconix
N-CHANNEL 60 V (D-S) MOSFET POWE
FQH35N40
FQH35N40
Fairchild Semiconductor
N-CHANNEL POWER MOSFET
SI7106DN-T1-E3
SI7106DN-T1-E3
Vishay Siliconix
MOSFET N-CH 20V 12.5A PPAK1212-8
DMT47M2SFVW-7
DMT47M2SFVW-7
Diodes Incorporated
MOSFET N-CH 40V PWRDI3333
SQS423EN-T1_BE3
SQS423EN-T1_BE3
Vishay Siliconix
MOSFET P-CH 30V 16A POWERPAK1212
IPI50N10S3L16AKSA1
IPI50N10S3L16AKSA1
Infineon Technologies
MOSFET N-CH 100V 50A TO262-3
IRFR4105TRL
IRFR4105TRL
Infineon Technologies
MOSFET N-CH 55V 27A DPAK
IRFR9020TRL
IRFR9020TRL
Vishay Siliconix
MOSFET P-CH 50V 9.9A DPAK
IRF3711SPBF
IRF3711SPBF
Infineon Technologies
MOSFET N-CH 20V 110A D2PAK
2SK3403(Q)
2SK3403(Q)
Toshiba Semiconductor and Storage
MOSFET N-CH 450V 13A TO220FL
PMT200EN,135
PMT200EN,135
NXP USA Inc.
MOSFET N-CH 100V 1.8A SOT223
Вас также может заинтересовать
G06NP06S2
G06NP06S2
Goford Semiconductor
N/P60V,RD(MAX)<35M@10V,RD(MAX)<4
G3035
G3035
Goford Semiconductor
P30V,RD(MAX)<59M@-10V,RD(MAX)<75
G3401L
G3401L
Goford Semiconductor
P30V,RD(MAX)<60M@-10V,RD(MAX)<70
G33N03S
G33N03S
Goford Semiconductor
N30V,RD(MAX)<12M@10V,RD(MAX)<13M
G2012
G2012
Goford Semiconductor
N20V,RD(MAX)<[email protected],RD(MAX)<18
G28N03D3
G28N03D3
Goford Semiconductor
N30V,RD(MAX)<12M@10V,RD(MAX)<18M
G35N02K
G35N02K
Goford Semiconductor
N20V,RD(MAX)<[email protected],RD(MAX)<18
G10P03
G10P03
Goford Semiconductor
P30V,RD(MAX)<[email protected],RD(MAX)<3
G45P02D3
G45P02D3
Goford Semiconductor
P20V,RD(MAX)<[email protected],RD(MAX)<
45P40
45P40
Goford Semiconductor
P40V,RD(MAX)<14M@-10V,VTH2V~3V T
G30N02T
G30N02T
Goford Semiconductor
N20V,RD(MAX)<[email protected],VTH0.5V~1.
630AT
630AT
Goford Semiconductor
N200V,RD(MAX)<250M@10V,RD(MAX)<3