GT650N15K

GT650N15K

Images are for reference only
See Product Specifications

GT650N15K
Описание:
N150V,RD(MAX)<65M@10V,VTH2.5V~4.
Упаковка:
Tape & Reel (TR)
Datasheet:
GT650N15K Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:GT650N15K
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Goford Semiconductor
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):f5857b5c2d0b94d156ab7cc94df182c6
Current - Continuous Drain (Id) @ 25°C:44fb8dcca168a71f877964651b9b44aa
Drive Voltage (Max Rds On, Min Rds On):76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:a768883355e946f725eef8f6232dec76
Vgs(th) (Max) @ Id:63ae2c6ac5292648558e227400623846
Gate Charge (Qg) (Max) @ Vgs:db83709cc1aa640e30cdddd177064057
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:2cfa0cbff34f505ab17d2dde2900298f
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):16103e6b285710d10838d1debe384097
Operating Temperature:57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:26334f21813abf4634f508e2476262a0
Package / Case:d6d5b809beb9f171e5b4097664b4dd95
In Stock: 2480
Stock:
2480 Can Ship Immediately
  • Делиться:
Для использования с
IRFS640A
IRFS640A
Fairchild Semiconductor
N-CHANNEL POWER MOSFET
IRF9530
IRF9530
Harris Corporation
MOSFET P-CH 100V 12A TO220AB
STW30NM50N
STW30NM50N
STMicroelectronics
MOSFET N-CH 500V 27A TO247-3
FDPF10N50UT
FDPF10N50UT
Fairchild Semiconductor
MOSFET N-CH 500V 8A TO220F
PXN012-60QLJ
PXN012-60QLJ
Nexperia USA Inc.
PXN012-60QL/SOT8002/MLPAK33
IXFB60N80P
IXFB60N80P
IXYS
MOSFET N-CH 800V 60A PLUS264
BSC010N04LSIATMA1
BSC010N04LSIATMA1
Infineon Technologies
MOSFET N-CH 40V 37A/100A TDSON
DMT69M5LFVW-7
DMT69M5LFVW-7
Diodes Incorporated
MOSFET BVDSS: 41V~60V POWERDI333
APT6010LLLG
APT6010LLLG
Microchip Technology
MOSFET N-CH 600V 54A TO264
PSMN3R2-30YLC,115
PSMN3R2-30YLC,115
Nexperia USA Inc.
MOSFET N-CH 30V 100A LFPAK56
ZVP2106AS
ZVP2106AS
Diodes Incorporated
MOSFET P-CH 60V 280MA TO92-3
IXFT80N08
IXFT80N08
IXYS
MOSFET N-CH 80V 80A TO268
Вас также может заинтересовать
03N06L
03N06L
Goford Semiconductor
N60V,RD(MAX)<100M@10V,RD(MAX)<12
G1006LE
G1006LE
Goford Semiconductor
N100V,RD(MAX)<150M@10V,RD(MAX)<1
GT650N15K
GT650N15K
Goford Semiconductor
N150V,RD(MAX)<65M@10V,VTH2.5V~4.
G10N03S
G10N03S
Goford Semiconductor
N30V,RD(MAX)<12M@10V,RD(MAX)<16M
G65P06K
G65P06K
Goford Semiconductor
P60V,RD(MAX)<18M@-10V,VTH-2V~-3.
G45P02D3
G45P02D3
Goford Semiconductor
P20V,RD(MAX)<[email protected],RD(MAX)<
G12P10K
G12P10K
Goford Semiconductor
P100V,RD(MAX)<200M@-10V,RD(MAX)<
GC11N65K
GC11N65K
Goford Semiconductor
N650V,RD(MAX)<360M@10V,VTH2.5V~4
G7P03L
G7P03L
Goford Semiconductor
P30V,RD(MAX)<23M@-10V,RD(MAX)<34
GT100N12T
GT100N12T
Goford Semiconductor
N120V,RD(MAX)<10M@10V,VTH2.5V~3.
G08P06D3
G08P06D3
Goford Semiconductor
P60V,RD(MAX)<52M@-10V,VTH-2V~-3.
G110N06T
G110N06T
Goford Semiconductor
N60V,RD(MAX)<6.4M@10V,RD(MAX)<8.