1002

1002

Images are for reference only
See Product Specifications

1002
Описание:
N100V,RD(MAX)<250M@10V,RD(MAX)<2
Упаковка:
Tape & Reel (TR)
Datasheet:
1002 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:1002
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Goford Semiconductor
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):227b5c7c7a2ed2ea3da210ed0860030d
Current - Continuous Drain (Id) @ 25°C:5f5468d54f2b86e7e60fac196581d7d0
Drive Voltage (Max Rds On, Min Rds On):336d5ebc5436534e61d16e63ddfca327
Rds On (Max) @ Id, Vgs:7e0d150fb5b4082c94259aafd2b53557
Vgs(th) (Max) @ Id:66756bbbd2b15b665d5248f5ca1758a1
Gate Charge (Qg) (Max) @ Vgs:9a935c8a1e91b57e9b3af740b54c1dd2
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:c384401fc8483ee9ed02bef1de089ef3
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):2b51bf10a90e84273072326525adb219
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:cdbfc7f87dda2b41686a11d9db7bf62e
Package / Case:51bf93173785f0f3fc2d8b70cf119689
In Stock: 3000
Stock:
3000 Can Ship Immediately
  • Делиться:
Для использования с
FQD4P25TM-WS
FQD4P25TM-WS
onsemi
MOSFET P-CH 250V 3.1A DPAK
EPC2214
EPC2214
EPC
GANFET N-CH 80V 10A DIE
FQD1N60TF
FQD1N60TF
Fairchild Semiconductor
MOSFET N-CH 600V 1A DPAK
PMPB07R3VPX
PMPB07R3VPX
Nexperia USA Inc.
PMPB07R3VP - 12 V, P-CHANNEL TRE
FDD86367
FDD86367
onsemi
MOSFET N-CH 80V 100A DPAK
FDA24N50F
FDA24N50F
onsemi
MOSFET N-CH 500V 24A TO3PN
AOSX21319C
AOSX21319C
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V 2.6A SC70-6
NTMFS6H836NLT1G
NTMFS6H836NLT1G
onsemi
MOSFET N-CH 80V 16A/77A 5DFN
FDBL0120N40
FDBL0120N40
onsemi
MOSFET N-CH 40V 240A 8HPSOF
IRF3711ZCSTRR
IRF3711ZCSTRR
Infineon Technologies
MOSFET N-CH 20V 92A D2PAK
TK22V65X5,LQ
TK22V65X5,LQ
Toshiba Semiconductor and Storage
PB-F POWER MOSFET TRANSISTOR DFN
SCT3060ALGC11
SCT3060ALGC11
Rohm Semiconductor
SICFET N-CH 650V 39A TO247N
Вас также может заинтересовать
GT090N06D52
GT090N06D52
Goford Semiconductor
N60V,RD(MAX)<9M@10V,RD(MAX)<13M@
03N06
03N06
Goford Semiconductor
N60V,RD(MAX)<100M@10V,RD(MAX)<12
G2312
G2312
Goford Semiconductor
N20V,RD(MAX)<18M@10V,RD(MAX)<20M
G3401L
G3401L
Goford Semiconductor
P30V,RD(MAX)<60M@-10V,RD(MAX)<70
G60N04K
G60N04K
Goford Semiconductor
N40V,RD(MAX)<7M@10V,RD(MAX)<12M@
G01N20LE
G01N20LE
Goford Semiconductor
N200V,RD(MAX)<850M@10V,RD(MAX)<9
GC11N65K
GC11N65K
Goford Semiconductor
N650V,RD(MAX)<360M@10V,VTH2.5V~4
G20P08K
G20P08K
Goford Semiconductor
P-80V,RD(MAX)<62M@-10V,RD(MAX)<7
630A
630A
Goford Semiconductor
N200V,RD(MAX)<280M@10V,VTH1V~3V,
G18P03D3
G18P03D3
Goford Semiconductor
P30V,RD(MAX)<10M@-10V,RD(MAX)<15
G20P10KE
G20P10KE
Goford Semiconductor
P-CH, -100V, 20A, RD(MAX)<116M@-
G65P06D5
G65P06D5
Goford Semiconductor
P60V,RD(MAX)<18M@-10V,VTH-2V~-3V