G60N04K

G60N04K

Images are for reference only
See Product Specifications

G60N04K
Описание:
N40V,RD(MAX)<7M@10V,RD(MAX)<12M@
Упаковка:
Tape & Reel (TR)
Datasheet:
G60N04K Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:G60N04K
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Goford Semiconductor
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):628cbc3e45d5bacb32414a526acf56ef
Current - Continuous Drain (Id) @ 25°C:fb1ae724394656879f0fafb4bad9a57d
Drive Voltage (Max Rds On, Min Rds On):336d5ebc5436534e61d16e63ddfca327
Rds On (Max) @ Id, Vgs:992be9544dcd55f3690247aadbd6facb
Vgs(th) (Max) @ Id:bae68a70e94fb31c33c772f4fdf89b99
Gate Charge (Qg) (Max) @ Vgs:adefee2be820ef0364f2851d0e700f1e
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:df0f7dd2b666126d89cfa95469f078ea
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):a3aebc29df35c4cad1f2f3322ef5d03d
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:514f87a5defc29be7fc6e223fca16578
Package / Case:d6d5b809beb9f171e5b4097664b4dd95
In Stock: 2490
Stock:
2490 Can Ship Immediately
  • Делиться:
Для использования с
IPP80N08S2L07AKSA1
IPP80N08S2L07AKSA1
Infineon Technologies
MOSFET N-CH 75V 80A TO220-3
2SK1154-E
2SK1154-E
Renesas Electronics America Inc
N-CHANNEL POWER MOSFET
STU4N52K3
STU4N52K3
STMicroelectronics
MOSFET N-CH 525V 2.5A IPAK
AUIRFZ48Z
AUIRFZ48Z
Infineon Technologies
AUIRFZ48Z - 55V-60V N-CHANNEL AU
STF7N80K5
STF7N80K5
STMicroelectronics
MOSFET N CH 800V 6A TO220FP
2N7002K-T1-GE3
2N7002K-T1-GE3
Vishay Siliconix
MOSFET N-CH 60V 300MA TO236
IRF135S203
IRF135S203
Infineon Technologies
MOSFET N-CH 135V 129A TO263-3
IXTT40N50L2-TRL
IXTT40N50L2-TRL
IXYS
MOSFET N-CH 500V 40A TO268
NTHD5904NT1
NTHD5904NT1
onsemi
MOSFET N-CH 20V 2.5A CHIPFET
STB85NS04Z
STB85NS04Z
STMicroelectronics
MOSFET N-CH 33V 80A D2PAK
BSR316PL6327HTSA1
BSR316PL6327HTSA1
Infineon Technologies
MOSFET P-CH 100V 360MA SC59
BSS84PW L6327
BSS84PW L6327
Infineon Technologies
MOSFET P-CH 60V 150MA SOT323-3
Вас также может заинтересовать
G20N06D52
G20N06D52
Goford Semiconductor
N60V,RD(MAX)<30M@10V,RD(MAX)<40M
1002
1002
Goford Semiconductor
N100V,RD(MAX)<250M@10V,RD(MAX)<2
G1003B
G1003B
Goford Semiconductor
N100V,RD(MAX)<170M@10V,RD(MAX)<1
G1006LE
G1006LE
Goford Semiconductor
N100V,RD(MAX)<150M@10V,RD(MAX)<1
G12P03D3
G12P03D3
Goford Semiconductor
P30V,RD(MAX)<20M@-10V,RD(MAX)<26
G50N03K
G50N03K
Goford Semiconductor
N30V,RD(MAX)<7M@10V,RD(MAX)<12M@
G06N06S
G06N06S
Goford Semiconductor
N60V,RD(MAX)<22M@10V,RD(MAX)<35M
G20N03K
G20N03K
Goford Semiconductor
N30V,RD(MAX)<20M@10V,RD(MAX)<24M
G02P06
G02P06
Goford Semiconductor
P60V,RD(MAX)<190M@-10V,RD(MAX)<2
G7P03L
G7P03L
Goford Semiconductor
P30V,RD(MAX)<23M@-10V,RD(MAX)<34
G3035L
G3035L
Goford Semiconductor
P30V,RD(MAX)<59M@-10V,RD(MAX)<75
18N20
18N20
Goford Semiconductor
N 200V, RD(MAX)<0.16@10V,VTH1.0V