G1006LE

G1006LE

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G1006LE
Описание:
N100V,RD(MAX)<150M@10V,RD(MAX)<1
Упаковка:
Tape & Reel (TR)
Datasheet:
G1006LE Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:G1006LE
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Goford Semiconductor
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):227b5c7c7a2ed2ea3da210ed0860030d
Current - Continuous Drain (Id) @ 25°C:f5471b3e019830b8910e32dfcbdd5756
Drive Voltage (Max Rds On, Min Rds On):214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:39ca480573724b2e3bb7825b21bd1c65
Vgs(th) (Max) @ Id:17ed95a87d7b17ee9a8302d07765c7da
Gate Charge (Qg) (Max) @ Vgs:37cfa0d4deea7b5e6e6b17fdc0726f19
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:6f7b40b03d37d38de130ca8b65ba547f
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):79ced615889a336e16193ff026970ba9
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:581cdcc7e1a235fe3e919028055e9e50
Package / Case:51bf93173785f0f3fc2d8b70cf119689
In Stock: 2988
Stock:
2988 Can Ship Immediately
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