G1006LE

G1006LE

Images are for reference only
See Product Specifications

G1006LE
Описание:
N100V,RD(MAX)<150M@10V,RD(MAX)<1
Упаковка:
Tape & Reel (TR)
Datasheet:
G1006LE Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:G1006LE
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Goford Semiconductor
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):227b5c7c7a2ed2ea3da210ed0860030d
Current - Continuous Drain (Id) @ 25°C:f5471b3e019830b8910e32dfcbdd5756
Drive Voltage (Max Rds On, Min Rds On):214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:39ca480573724b2e3bb7825b21bd1c65
Vgs(th) (Max) @ Id:17ed95a87d7b17ee9a8302d07765c7da
Gate Charge (Qg) (Max) @ Vgs:37cfa0d4deea7b5e6e6b17fdc0726f19
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:6f7b40b03d37d38de130ca8b65ba547f
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):79ced615889a336e16193ff026970ba9
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:581cdcc7e1a235fe3e919028055e9e50
Package / Case:51bf93173785f0f3fc2d8b70cf119689
In Stock: 2988
Stock:
2988 Can Ship Immediately
  • Делиться:
Для использования с
SI1467DH-T1-E3
SI1467DH-T1-E3
Vishay Siliconix
MOSFET P-CH 20V 2.7A SC70-6
BUK9M17-30EX
BUK9M17-30EX
Nexperia USA Inc.
MOSFET N-CH 30V 37A LFPAK33
SI2336DS-T1-BE3
SI2336DS-T1-BE3
Vishay Siliconix
MOSFET N-CH 30V 4.3A/5.2A SOT23
PJD12P06_L2_00001
PJD12P06_L2_00001
Panjit International Inc.
60V P-CHANNEL ENHANCEMENT MODE M
FQPF4N90
FQPF4N90
Fairchild Semiconductor
MOSFET N-CH 900V 2.5A TO220F
RM135N100HD
RM135N100HD
Rectron USA
MOSFET N-CH 100V 135A TO263-2
DMN7022LFG-13
DMN7022LFG-13
Diodes Incorporated
MOSFET N-CH 75V 7.8A PWRDI3333-8
CPH6445-TL-W
CPH6445-TL-W
onsemi
MOSFET N-CH 60V 3.5A 6CPH
TK3A65DA(STA4,QM)
TK3A65DA(STA4,QM)
Toshiba Semiconductor and Storage
MOSFET N-CH 650V 2.5A TO220SIS
SIHF28N60EF-GE3
SIHF28N60EF-GE3
Vishay Siliconix
MOSFET N-CH 600V 28A TO220
IRF3709ZCSTRL
IRF3709ZCSTRL
Infineon Technologies
MOSFET N-CH 30V 87A D2PAK
MCH3477-TL-W
MCH3477-TL-W
onsemi
MOSFET N-CH 20V 4.5A SC70
Вас также может заинтересовать
G4616
G4616
Goford Semiconductor
N+P/-40V,RD(MAX)<20M@10V,RD(MAX)
G3404B
G3404B
Goford Semiconductor
N30V,RD(MAX)<22M@10V,RD(MAX)<35M
9926
9926
Goford Semiconductor
N20V,RD(MAX)<[email protected],RD(MAX)<30
G23N06K
G23N06K
Goford Semiconductor
N60V,RD(MAX)<35M@10V,RD(MAX)<45M
G06N06S
G06N06S
Goford Semiconductor
N60V,RD(MAX)<22M@10V,RD(MAX)<35M
3400
3400
Goford Semiconductor
N30V,RD(MAX)<27M@10V,RD(MAX)<33M
G16P03D3
G16P03D3
Goford Semiconductor
P30V,RD(MAX)<12M@-10V,RD(MAX)<18
G12P10K
G12P10K
Goford Semiconductor
P100V,RD(MAX)<200M@-10V,RD(MAX)<
GT52N10D5
GT52N10D5
Goford Semiconductor
N100V,RD(MAX)<7.5M@10V,RD(MAX)<1
GT100N12T
GT100N12T
Goford Semiconductor
N120V,RD(MAX)<10M@10V,VTH2.5V~3.
2301H
2301H
Goford Semiconductor
P30V,RD(MAX)<[email protected],RD(MAX)<
G2305
G2305
Goford Semiconductor
P20V,RD(MAX)<[email protected],RD(MAX)<7