GT52N10D5

GT52N10D5

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GT52N10D5
Описание:
N100V,RD(MAX)<7.5M@10V,RD(MAX)<1
Упаковка:
Tape & Reel (TR)
Datasheet:
GT52N10D5 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:GT52N10D5
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Goford Semiconductor
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):227b5c7c7a2ed2ea3da210ed0860030d
Current - Continuous Drain (Id) @ 25°C:0ba53cda647f50a8e9cca3e431d93c03
Drive Voltage (Max Rds On, Min Rds On):214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:1b860a6f0555e489a08abdf2d6b3586a
Vgs(th) (Max) @ Id:bae68a70e94fb31c33c772f4fdf89b99
Gate Charge (Qg) (Max) @ Vgs:cfb30d70e9813b4f562f2b84cc798df0
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:09a744fee33db7f9f6cc5995c6ae0078
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):c2695bd87197b90c9094095e9837d774
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:17087e8d76273a63aa287b61d071f602
Package / Case:7f82de9f5c66f9f803bc2f6ee2b90c1b
In Stock: 12735
Stock:
12735 Can Ship Immediately
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