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See Product Specifications
| номер части: | G10N10A |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - FETs, MOSFETs - Single |
| Производитель: | Goford Semiconductor |
| Упаковка: | Tape & Reel (TR) |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| FET Type: | 43272ae8a787f198ca6b6227abc259ef |
| Technology: | 54a5be1d27124bd4f8897fe25aa94ecc |
| Drain to Source Voltage (Vdss): | 227b5c7c7a2ed2ea3da210ed0860030d |
| Current - Continuous Drain (Id) @ 25°C: | 52494cba539840e9393c9095a1421004 |
| Drive Voltage (Max Rds On, Min Rds On): | 214881f189d1d05281deda79f8c1bf77 |
| Rds On (Max) @ Id, Vgs: | 7a0aa9f748e719c69859ef5f6d9624b5 |
| Vgs(th) (Max) @ Id: | 66756bbbd2b15b665d5248f5ca1758a1 |
| Gate Charge (Qg) (Max) @ Vgs: | 023f224d6b8afb36d9df8bc446b12e5a |
| Vgs (Max): | ce6f0ee0e28319cd77230729fffeb8d1 |
| Input Capacitance (Ciss) (Max) @ Vds: | 8b8590df6bb076f8edb5f265553f2090 |
| FET Feature: | 336d5ebc5436534e61d16e63ddfca327 |
| Power Dissipation (Max): | 2aa412a62a0bcb017844b512f505dbed |
| Operating Temperature: | 6a357bb51737d359c8bcaa66995aadb4 |
| Mounting Type: | 6277abee52798fa9d158f75ff84dd873 |
| Supplier Device Package: | 1a947a79ef78c754f6c8cbc205e96e43 |
| Package / Case: | d6d5b809beb9f171e5b4097664b4dd95 |
