GC20N65Q

GC20N65Q

Images are for reference only
See Product Specifications

GC20N65Q
Описание:
N650V,RD(MAX)<170M@10V,VTH2.5V~4
Упаковка:
Tube
Datasheet:
GC20N65Q Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:GC20N65Q
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Goford Semiconductor
Упаковка:Tube
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):347f255197950e6b02089b73b6a8acdd
Current - Continuous Drain (Id) @ 25°C:44fb8dcca168a71f877964651b9b44aa
Drive Voltage (Max Rds On, Min Rds On):76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:852581212042e6d36f0b968a6f85ed67
Vgs(th) (Max) @ Id:63ae2c6ac5292648558e227400623846
Gate Charge (Qg) (Max) @ Vgs:1c2591769ca12fd398ae23dd26f13ec6
Vgs (Max):972af1bbf385e6f2ec41d2be6228bd7e
Input Capacitance (Ciss) (Max) @ Vds:24c043f9bfd0dff71df4ca5545e7d874
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):0407b3830b0487d57b9be5a02a067750
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:506558024381a3c368cb88e9e94f6845
Supplier Device Package:566bc0f44c33782e0104763798b071ab
Package / Case:748a8539a6c3c7dbdb455218c72fac40
In Stock: 50
Stock:
50 Can Ship Immediately
  • Делиться:
Для использования с
IRF7451TRPBF
IRF7451TRPBF
Infineon Technologies
MOSFET N-CH 150V 3.6A 8SO
IPSA70R900P7SAKMA1
IPSA70R900P7SAKMA1
Infineon Technologies
MOSFET N-CH 700V 6A TO251-3
IPP100N18N3GXKSA1
IPP100N18N3GXKSA1
Infineon Technologies
N-CHANNEL POWER MOSFET
BSC060N10NS3GATMA1
BSC060N10NS3GATMA1
Infineon Technologies
MOSFET N-CH 100V 14.9/90A 8TDSON
MSJU07N65A-TP
MSJU07N65A-TP
Micro Commercial Co
N-CHANNEL MOSFET, DPAK
DMTH4008LPSQ-13
DMTH4008LPSQ-13
Diodes Incorporated
MOSFET N-CH 40V PWRDI5060
AUIRFR024N
AUIRFR024N
Infineon Technologies
MOSFET N-CH 55V 17A TO252AA
IRF8734PBF
IRF8734PBF
Infineon Technologies
MOSFET N-CH 30V 21A 8SO
FQD4P40TM-AM002
FQD4P40TM-AM002
onsemi
MOSFET P-CH 400V 2.7A DPAK
IPP60R230P6XKSA1
IPP60R230P6XKSA1
Infineon Technologies
MOSFET N-CH 600V 16.8A TO220-3
62-0095PBF
62-0095PBF
Infineon Technologies
MOSFET N-CH 20V 10A/12A 8SOIC
RV8C010UNHZGG2CR
RV8C010UNHZGG2CR
Rohm Semiconductor
MOSFET N-CH 20V 1A DFN1010-3W
Вас также может заинтересовать
03N06L
03N06L
Goford Semiconductor
N60V,RD(MAX)<100M@10V,RD(MAX)<12
G20N03D2
G20N03D2
Goford Semiconductor
N30V,RD(MAX)<24M@10V,RD(MAX)<29M
G50N03K
G50N03K
Goford Semiconductor
N30V,RD(MAX)<7M@10V,RD(MAX)<12M@
G20N03K
G20N03K
Goford Semiconductor
N30V,RD(MAX)<20M@10V,RD(MAX)<24M
60N06
60N06
Goford Semiconductor
N60V,RD(MAX)<17M@10V,RD(MAX)<21M
GC11N65K
GC11N65K
Goford Semiconductor
N650V,RD(MAX)<360M@10V,VTH2.5V~4
GT52N10T
GT52N10T
Goford Semiconductor
N100V,RD(MAX)<9M@10V,RD(MAX)<15M
06N06L
06N06L
Goford Semiconductor
N60V,RD(MAX)<42M@10V,RD(MAX)<46M
630A
630A
Goford Semiconductor
N200V,RD(MAX)<280M@10V,VTH1V~3V,
G65P06D5
G65P06D5
Goford Semiconductor
P60V,RD(MAX)<18M@-10V,VTH-2V~-3V
G65P06F
G65P06F
Goford Semiconductor
P-CH, -60V, 65A, RD(MAX)<18M@-10
G65P06T
G65P06T
Goford Semiconductor
P-60V,RD(MAX)<18M@-10V,VTH-2.0V~