GT090N06D52

GT090N06D52

Images are for reference only
See Product Specifications

GT090N06D52
Описание:
N60V,RD(MAX)<9M@10V,RD(MAX)<13M@
Упаковка:
Tape & Reel (TR)
Datasheet:
GT090N06D52 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:GT090N06D52
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Arrays
Производитель:Goford Semiconductor
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:2b5689f57c402bfbecf4b1f4e5ad8759
FET Feature:eb6d8ae6f20283755b339c0dc273988b
Drain to Source Voltage (Vdss):86ca63bb9efbaa94bcb05b428144623c
Current - Continuous Drain (Id) @ 25°C:3bea801ada2019f6e4c9b4fd24faaa4c
Rds On (Max) @ Id, Vgs:336d5ebc5436534e61d16e63ddfca327
Vgs(th) (Max) @ Id:604e14281627abaa31ad75dce0e5c80f
Gate Charge (Qg) (Max) @ Vgs:e9656fb72fdaa69a91f4b7a56d9bccfa
Input Capacitance (Ciss) (Max) @ Vds:d24bb928e4d0396bc26d5ff944741028
Power - Max:bd2ea6844d1574318ec99443912ca6de
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Package / Case:7f82de9f5c66f9f803bc2f6ee2b90c1b
Supplier Device Package:67421839b78edf60d23c00b375f06c0a
In Stock: 4754
Stock:
4754 Can Ship Immediately
  • Делиться:
Для использования с
SI6968BEDQ-T1-GE3
SI6968BEDQ-T1-GE3
Vishay Siliconix
MOSFET 2N-CH 20V 5.2A 8-TSSOP
SQ9945BEY-T1_GE3
SQ9945BEY-T1_GE3
Vishay Siliconix
MOSFET 2N-CH 60V 5.4A
CSD88599Q5DC
CSD88599Q5DC
Texas Instruments
MOSFET 2 N-CH 60V 22-VSON-CLIP
FDMC7200S
FDMC7200S
onsemi
MOSFET 2N-CH 30V 7A/13A 8POWER33
PJL9804_R2_00001
PJL9804_R2_00001
Panjit International Inc.
30V DUAL N-CHANNEL ENHANCEMENT M
FDS4895C
FDS4895C
Fairchild Semiconductor
P-CHANNEL POWER MOSFET
MSCSM170TLM11CAG
MSCSM170TLM11CAG
Microchip Technology
PM-MOSFET-SIC-SBD-SP6C
MCCD2007-TP
MCCD2007-TP
Micro Commercial Co
MOSFET 2N-CH 20V 7A
IXTL2X180N10T
IXTL2X180N10T
IXYS
MOSFET 2N-CH 100V 100A I5-PAK
IRF7389
IRF7389
Infineon Technologies
MOSFET N/P-CH 30V 8-SOIC
AUIRF7304Q
AUIRF7304Q
Infineon Technologies
MOSFET 2P-CH 20V 4A 8SOIC
HP8MA2TB1
HP8MA2TB1
Rohm Semiconductor
HP8MA2 IS LOW ON-RESISTANCE AND
Вас также может заинтересовать
G2014
G2014
Goford Semiconductor
N20V,RD(MAX)<[email protected],RD(MAX)<11M
G10N03S
G10N03S
Goford Semiconductor
N30V,RD(MAX)<12M@10V,RD(MAX)<16M
G09P02L
G09P02L
Goford Semiconductor
P20V,RD(MAX)<[email protected],RD(MAX)<3
G10N10A
G10N10A
Goford Semiconductor
N100V,RD(MAX)130mOHM@10V,TO-252
G45P02D3
G45P02D3
Goford Semiconductor
P20V,RD(MAX)<[email protected],RD(MAX)<
60N06
60N06
Goford Semiconductor
N60V,RD(MAX)<17M@10V,RD(MAX)<21M
G7P03L
G7P03L
Goford Semiconductor
P30V,RD(MAX)<23M@-10V,RD(MAX)<34
G3035L
G3035L
Goford Semiconductor
P30V,RD(MAX)<59M@-10V,RD(MAX)<75
GT52N10T
GT52N10T
Goford Semiconductor
N100V,RD(MAX)<9M@10V,RD(MAX)<15M
G2304
G2304
Goford Semiconductor
MOSFET N-CH 30V 3.6A SOT-23
45P40
45P40
Goford Semiconductor
P40V,RD(MAX)<14M@-10V,VTH2V~3V T
G50N03J
G50N03J
Goford Semiconductor
N30V,RD(MAX)<7M@10V,RD(MAX)<12M@