GC11N65F

GC11N65F

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GC11N65F
Описание:
N650V,RD(MAX)<360M@10V,VTH2.5V~4
Упаковка:
Tube
Datasheet:
GC11N65F Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:GC11N65F
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Goford Semiconductor
Упаковка:Tube
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):347f255197950e6b02089b73b6a8acdd
Current - Continuous Drain (Id) @ 25°C:4031d16f69847588e8c8cb7950a72a47
Drive Voltage (Max Rds On, Min Rds On):336d5ebc5436534e61d16e63ddfca327
Rds On (Max) @ Id, Vgs:29a6921a00e582f30d4c460bb9140ae9
Vgs(th) (Max) @ Id:9238c44d66e9d51854326c16b3397896
Gate Charge (Qg) (Max) @ Vgs:82b113cefa8bdd5383fff44f641f8fc1
Vgs (Max):972af1bbf385e6f2ec41d2be6228bd7e
Input Capacitance (Ciss) (Max) @ Vds:88fa549fc26c7cb083d3d230a6dbd549
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):653894f8ad28b34e07e92639688eafad
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:506558024381a3c368cb88e9e94f6845
Supplier Device Package:0b3f3c936192051240c8337b7cfe4c02
Package / Case:a02e0d1a928de3366340ceae094aecd8
In Stock: 49
Stock:
49 Can Ship Immediately
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