GC11N65F

GC11N65F

Images are for reference only
See Product Specifications

GC11N65F
Описание:
N650V,RD(MAX)<360M@10V,VTH2.5V~4
Упаковка:
Tube
Datasheet:
GC11N65F Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:GC11N65F
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Goford Semiconductor
Упаковка:Tube
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):347f255197950e6b02089b73b6a8acdd
Current - Continuous Drain (Id) @ 25°C:4031d16f69847588e8c8cb7950a72a47
Drive Voltage (Max Rds On, Min Rds On):336d5ebc5436534e61d16e63ddfca327
Rds On (Max) @ Id, Vgs:29a6921a00e582f30d4c460bb9140ae9
Vgs(th) (Max) @ Id:9238c44d66e9d51854326c16b3397896
Gate Charge (Qg) (Max) @ Vgs:82b113cefa8bdd5383fff44f641f8fc1
Vgs (Max):972af1bbf385e6f2ec41d2be6228bd7e
Input Capacitance (Ciss) (Max) @ Vds:88fa549fc26c7cb083d3d230a6dbd549
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):653894f8ad28b34e07e92639688eafad
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:506558024381a3c368cb88e9e94f6845
Supplier Device Package:0b3f3c936192051240c8337b7cfe4c02
Package / Case:a02e0d1a928de3366340ceae094aecd8
In Stock: 49
Stock:
49 Can Ship Immediately
  • Делиться:
Для использования с
PMV100XPEAR
PMV100XPEAR
Nexperia USA Inc.
MOSFET P-CH 20V 2.4A TO236AB
IXTP52P10P
IXTP52P10P
IXYS
MOSFET P-CH 100V 52A TO220AB
SI2304BDS-T1-BE3
SI2304BDS-T1-BE3
Vishay Siliconix
N-CHANNEL 30-V (D-S) MOSFET
NTMFSC2D9N08H
NTMFSC2D9N08H
onsemi
T8 80V DFN8 5X6 DUAL COOL
IXTA3N100P-TRL
IXTA3N100P-TRL
IXYS
MOSFET N-CH 1000V 3A TO263
GT100N12D5
GT100N12D5
Goford Semiconductor
N120V,RD(MAX)<10M@10V,VTH2.5V~3.
IPP80N06S2-H5
IPP80N06S2-H5
Infineon Technologies
IPP80N06 - 55V-60V N-CHANNEL AUT
PHB152NQ03LTA,118
PHB152NQ03LTA,118
NXP USA Inc.
MOSFET N-CH 25V 75A D2PAK
NTD95N02R
NTD95N02R
onsemi
MOSFET N-CH 24V 12A/32A DPAK
IRFR3518TRPBF
IRFR3518TRPBF
Infineon Technologies
MOSFET N-CH 80V 38A DPAK
SIA430DJ-T4-GE3
SIA430DJ-T4-GE3
Vishay Siliconix
MOSFET N-CH 20V 12A/12A PPAK
AO6401
AO6401
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V 5A 6TSOP
Вас также может заинтересовать
03N06
03N06
Goford Semiconductor
N60V,RD(MAX)<100M@10V,RD(MAX)<12
GT1003D
GT1003D
Goford Semiconductor
N100V,RD(MAX)<130M@10V,RD(MAX)<1
G3404LL
G3404LL
Goford Semiconductor
N30V,RD(MAX)<22M@10V,RD(MAX)<35M
G50N03K
G50N03K
Goford Semiconductor
N30V,RD(MAX)<7M@10V,RD(MAX)<12M@
5N20A
5N20A
Goford Semiconductor
N200V,RD(MAX)<650M@10V,VTH1V~3V,
G10N03S
G10N03S
Goford Semiconductor
N30V,RD(MAX)<12M@10V,RD(MAX)<16M
GT52N10D5
GT52N10D5
Goford Semiconductor
N100V,RD(MAX)<7.5M@10V,RD(MAX)<1
GC11N65K
GC11N65K
Goford Semiconductor
N650V,RD(MAX)<360M@10V,VTH2.5V~4
GC20N65F
GC20N65F
Goford Semiconductor
N650V,RD(MAX)<170M@10V,VTH2.5V~4
GT100N12D5
GT100N12D5
Goford Semiconductor
N120V,RD(MAX)<10M@10V,VTH2.5V~3.
G18P03D3
G18P03D3
Goford Semiconductor
P30V,RD(MAX)<10M@-10V,RD(MAX)<15
G50N03J
G50N03J
Goford Semiconductor
N30V,RD(MAX)<7M@10V,RD(MAX)<12M@