GC11N65K

GC11N65K

Images are for reference only
See Product Specifications

GC11N65K
Описание:
N650V,RD(MAX)<360M@10V,VTH2.5V~4
Упаковка:
Tape & Reel (TR)
Datasheet:
GC11N65K Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:GC11N65K
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Goford Semiconductor
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):347f255197950e6b02089b73b6a8acdd
Current - Continuous Drain (Id) @ 25°C:339da39144bec9f61f0945ae3ef8f55e
Drive Voltage (Max Rds On, Min Rds On):76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:29a6921a00e582f30d4c460bb9140ae9
Vgs(th) (Max) @ Id:9238c44d66e9d51854326c16b3397896
Gate Charge (Qg) (Max) @ Vgs:82b113cefa8bdd5383fff44f641f8fc1
Vgs (Max):972af1bbf385e6f2ec41d2be6228bd7e
Input Capacitance (Ciss) (Max) @ Vds:88fa549fc26c7cb083d3d230a6dbd549
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):44b670c085128b792b06ef64b5c30aa8
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:26334f21813abf4634f508e2476262a0
Package / Case:d6d5b809beb9f171e5b4097664b4dd95
In Stock: 2500
Stock:
2500 Can Ship Immediately
  • Делиться:
Для использования с
UJ4SC075009K4S
UJ4SC075009K4S
UnitedSiC
750V/9MOHM, SIC, STACKED CASCODE
G3R60MT07K
G3R60MT07K
GeneSiC Semiconductor
750V 60M TO-247-4 G3R SIC MOSFET
IPP055N08NF2SAKMA1
IPP055N08NF2SAKMA1
Infineon Technologies
TRENCH 40<-<100V
NTPF450N80S3Z
NTPF450N80S3Z
onsemi
MOSFET N-CH 800V 11A TO220-3
BVSS84LT1G
BVSS84LT1G
onsemi
MOSFET P-CH 50V 130MA SOT23-3
PMZB550UNEYL
PMZB550UNEYL
Nexperia USA Inc.
MOSFET N-CH 30V 590MA DFN1006B-3
STL13N60M6
STL13N60M6
STMicroelectronics
MOSFET N-CH 600V 7A POWERFLAT HV
TSM130NB06LCR RLG
TSM130NB06LCR RLG
Taiwan Semiconductor Corporation
MOSFET N-CH 60V 10A/51A 8PDFN
PH5330E,115
PH5330E,115
NXP USA Inc.
MOSFET N-CH 30V 80A LFPAK56
FQA24N50F
FQA24N50F
onsemi
MOSFET N-CH 500V 24A TO3P
IXFN44N50U3
IXFN44N50U3
IXYS
MOSFET N-CH 500V 44A SOT-227B
IPD088N06N3GATMA1
IPD088N06N3GATMA1
Infineon Technologies
MOSFET N-CH 60V 50A TO252-3
Вас также может заинтересовать
G6N02L
G6N02L
Goford Semiconductor
MOSFET N-CH 20V 6A SOT-23-3L
G1006LE
G1006LE
Goford Semiconductor
N100V,RD(MAX)<150M@10V,RD(MAX)<1
3400
3400
Goford Semiconductor
N30V,RD(MAX)<27M@10V,RD(MAX)<33M
G10P03
G10P03
Goford Semiconductor
P30V,RD(MAX)<[email protected],RD(MAX)<3
G26P04K
G26P04K
Goford Semiconductor
P-40V,RD(MAX)<18M@-10V,RD(MAX)<2
3415A
3415A
Goford Semiconductor
P20V,RD(MAX)<[email protected],RD(MAX)<6
GC20N65Q
GC20N65Q
Goford Semiconductor
N650V,RD(MAX)<170M@10V,VTH2.5V~4
06N06L
06N06L
Goford Semiconductor
N60V,RD(MAX)<42M@10V,RD(MAX)<46M
GT060N04D3
GT060N04D3
Goford Semiconductor
N40V,RD(MAX)<6.5M@10V,RD(MAX)<10
G100N03D5
G100N03D5
Goford Semiconductor
N-CH, 30V, 100A, RD(MAX)<3.5M@10
G65P06F
G65P06F
Goford Semiconductor
P-CH, -60V, 65A, RD(MAX)<18M@-10
G08N06S
G08N06S
Goford Semiconductor
N60V, RD(MAX)<30M@10V,RD(MAX)<40