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See Product Specifications
| номер части: | GT100N12T |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - FETs, MOSFETs - Single |
| Производитель: | Goford Semiconductor |
| Упаковка: | Tube |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| FET Type: | 43272ae8a787f198ca6b6227abc259ef |
| Technology: | 54a5be1d27124bd4f8897fe25aa94ecc |
| Drain to Source Voltage (Vdss): | 53b3b1ea0de8e56a28871162445a88f6 |
| Current - Continuous Drain (Id) @ 25°C: | 47916a4829b89bb236b00d9cd3628313 |
| Drive Voltage (Max Rds On, Min Rds On): | 76f7bec4411c6fbb49ed5d21d8974faf |
| Rds On (Max) @ Id, Vgs: | 9b252ea3ca8de6fc974b48a210216207 |
| Vgs(th) (Max) @ Id: | 54e5d6e67176a5b9df661d089760961f |
| Gate Charge (Qg) (Max) @ Vgs: | 9e541cbc895757398ae8d0144a8ced7d |
| Vgs (Max): | ce6f0ee0e28319cd77230729fffeb8d1 |
| Input Capacitance (Ciss) (Max) @ Vds: | 84fc9657ae69a4d13f1b0d70c9b497e9 |
| FET Feature: | 336d5ebc5436534e61d16e63ddfca327 |
| Power Dissipation (Max): | ce5340b24141d0946f2d6a52045d3c27 |
| Operating Temperature: | 6a357bb51737d359c8bcaa66995aadb4 |
| Mounting Type: | 506558024381a3c368cb88e9e94f6845 |
| Supplier Device Package: | 21023271cb741070ebf3efcc38cc7f20 |
| Package / Case: | 46bb638de2ea693de650d7f1c3115468 |
