GT100N12T

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See Product Specifications

Mfr. #:

GT100N12T

Mfr.:

Goford Semiconductor

Описание:

N120V,RD(MAX)<10M@10V,VTH2.5V~3.

Упаковка:

Tube

Datasheet:

GT100N12T Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	GT100N12T
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Goford Semiconductor
Упаковка:	Tube
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	53b3b1ea0de8e56a28871162445a88f6
Current - Continuous Drain (Id) @ 25°C:	47916a4829b89bb236b00d9cd3628313
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	9b252ea3ca8de6fc974b48a210216207
Vgs(th) (Max) @ Id:	54e5d6e67176a5b9df661d089760961f
Gate Charge (Qg) (Max) @ Vgs:	9e541cbc895757398ae8d0144a8ced7d
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	84fc9657ae69a4d13f1b0d70c9b497e9
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	ce5340b24141d0946f2d6a52045d3c27
Operating Temperature:	6a357bb51737d359c8bcaa66995aadb4
Mounting Type:	506558024381a3c368cb88e9e94f6845
Supplier Device Package:	21023271cb741070ebf3efcc38cc7f20
Package / Case:	46bb638de2ea693de650d7f1c3115468

In Stock: 70

Stock:

70 Can Ship Immediately