GC20N65T

GC20N65T

Images are for reference only
See Product Specifications

GC20N65T
Описание:
N650V,RD(MAX)<170M@10V,VTH2.5V~4
Упаковка:
Tube
Datasheet:
GC20N65T Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:GC20N65T
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Goford Semiconductor
Упаковка:Tube
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):347f255197950e6b02089b73b6a8acdd
Current - Continuous Drain (Id) @ 25°C:44fb8dcca168a71f877964651b9b44aa
Drive Voltage (Max Rds On, Min Rds On):76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:852581212042e6d36f0b968a6f85ed67
Vgs(th) (Max) @ Id:63ae2c6ac5292648558e227400623846
Gate Charge (Qg) (Max) @ Vgs:1c2591769ca12fd398ae23dd26f13ec6
Vgs (Max):972af1bbf385e6f2ec41d2be6228bd7e
Input Capacitance (Ciss) (Max) @ Vds:24c043f9bfd0dff71df4ca5545e7d874
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):0407b3830b0487d57b9be5a02a067750
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:506558024381a3c368cb88e9e94f6845
Supplier Device Package:21023271cb741070ebf3efcc38cc7f20
Package / Case:46bb638de2ea693de650d7f1c3115468
In Stock: 100
Stock:
100 Can Ship Immediately
  • Делиться:
Для использования с
PJQ5442-AU_R2_000A1
PJQ5442-AU_R2_000A1
Panjit International Inc.
40V N-CHANNEL ENHANCEMENT MODE M
NP80N04MLG-S18-AY
NP80N04MLG-S18-AY
Renesas Electronics America Inc
MOSFET N-CH 40V 80A TO220
TN0106N3-G
TN0106N3-G
Microchip Technology
MOSFET N-CH 60V 350MA TO92-3
CSD17312Q5
CSD17312Q5
Texas Instruments
MOSFET N-CH 30V 38A/100A 8VSON
SUD50N04-8M8P-4GE3
SUD50N04-8M8P-4GE3
Vishay Siliconix
MOSFET N-CH 40V 14A/50A TO252
STB28NM50N
STB28NM50N
STMicroelectronics
MOSFET N-CH 500V 21A D2PAK
FDMS0300S
FDMS0300S
onsemi
MOSFET N-CH 30V 31A/49A 8PQFN
MMIX1F44N100Q3
MMIX1F44N100Q3
IXYS
MOSFET N-CH 1000V 30A 24SMPD
IRFP344
IRFP344
Vishay Siliconix
MOSFET N-CH 450V 9.5A TO247-3
SPD04N60C3BTMA1
SPD04N60C3BTMA1
Infineon Technologies
MOSFET N-CH 650V 4.5A TO252-3
FDZ203N
FDZ203N
onsemi
MOSFET N-CH 20V 7.5A 9BGA
NP88N075KUE-E1-AZ
NP88N075KUE-E1-AZ
Renesas Electronics America Inc
TRANSISTOR
Вас также может заинтересовать
GT1003D
GT1003D
Goford Semiconductor
N100V,RD(MAX)<130M@10V,RD(MAX)<1
G5P40L
G5P40L
Goford Semiconductor
P40V,RD(MAX)<85M@-10V,RD(MAX)<12
G35N02K
G35N02K
Goford Semiconductor
N20V,RD(MAX)<[email protected],RD(MAX)<18
G50N03D5
G50N03D5
Goford Semiconductor
N30V,RD(MAX)<4.5M@10V,RD(MAX)<8M
GT110N06S
GT110N06S
Goford Semiconductor
N60V,RD(MAX)<[email protected],RD(MAX)<1
G29
G29
Goford Semiconductor
P15V,RD(MAX)<[email protected],RD(MAX)<4
GC11N65K
GC11N65K
Goford Semiconductor
N650V,RD(MAX)<360M@10V,VTH2.5V~4
G86N06K
G86N06K
Goford Semiconductor
N60V,RD(MAX)<8.4M@10V,VTH2V~4V ,
GT100N12M
GT100N12M
Goford Semiconductor
N120V,RD(MAX)<10M@10V,VTH2.5V~3.
G30N04D3
G30N04D3
Goford Semiconductor
MOSFET N-CH 40V 30A DFN33-8L
G18P03D3
G18P03D3
Goford Semiconductor
P30V,RD(MAX)<10M@-10V,RD(MAX)<15
GT035N06T
GT035N06T
Goford Semiconductor
N-CH, 60V,170A, RD(MAX)<3.5M@10V