GT100N12D5

GT100N12D5

Images are for reference only
See Product Specifications

GT100N12D5
Описание:
N120V,RD(MAX)<10M@10V,VTH2.5V~3.
Упаковка:
Tape & Reel (TR)
Datasheet:
GT100N12D5 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:GT100N12D5
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Goford Semiconductor
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):53b3b1ea0de8e56a28871162445a88f6
Current - Continuous Drain (Id) @ 25°C:01a654fc53f0b70a0ab169396b99d213
Drive Voltage (Max Rds On, Min Rds On):336d5ebc5436534e61d16e63ddfca327
Rds On (Max) @ Id, Vgs:9b252ea3ca8de6fc974b48a210216207
Vgs(th) (Max) @ Id:54e5d6e67176a5b9df661d089760961f
Gate Charge (Qg) (Max) @ Vgs:9e541cbc895757398ae8d0144a8ced7d
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:84fc9657ae69a4d13f1b0d70c9b497e9
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):74a0596c31a565874e735ffcb46899f7
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:fcc5df0bcd31033faaf59003f37c4576
Package / Case:67fd376bd79eda48286f8f6e0131d8c9
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
SSM3J144TU,LXHF
SSM3J144TU,LXHF
Toshiba Semiconductor and Storage
SMOS P-CH VDSS:-20V VGSS:-8/+6V
FDPF320N06L
FDPF320N06L
onsemi
N-CHANNEL LOGIC LEVEL POWERTRENC
FQA27N25
FQA27N25
onsemi
MOSFET N-CH 250V 27A TO3PN
BSS138BKW,115
BSS138BKW,115
Nexperia USA Inc.
MOSFET N-CH 60V 320MA SOT323
IAUZ40N06S5L050ATMA1
IAUZ40N06S5L050ATMA1
Infineon Technologies
MOSFET_)40V 60V) PG-TSDSON-8
IRFI744GPBF
IRFI744GPBF
Vishay Siliconix
MOSFET N-CH 450V 4.9A TO220-3
SPW17N80C3A
SPW17N80C3A
Infineon Technologies
MOSFET N-CH 800V 17A TO247-3
BSS209PW L6327
BSS209PW L6327
Infineon Technologies
MOSFET P-CH 20V 580MA SOT323-3
JANTXV2N7227
JANTXV2N7227
Microsemi Corporation
MOSFET N-CH 400V 14A TO254AA
NVMFS5C442NLT1G
NVMFS5C442NLT1G
onsemi
MOSFET N-CH 40V 27A/127A 5DFN
IPD06P002NSAUMA1
IPD06P002NSAUMA1
Infineon Technologies
MOSFET P-CH 60V 35A TO252-3
CP406-CWDM3011N-WN
CP406-CWDM3011N-WN
Central Semiconductor Corp
MOSFET N-CH 11A 30V BARE DIE
Вас также может заинтересовать
G4953S
G4953S
Goford Semiconductor
P+P -30V,RD(MAX)<60M@-10V,RD(MAX
G4616
G4616
Goford Semiconductor
N+P/-40V,RD(MAX)<20M@10V,RD(MAX)
03N06
03N06
Goford Semiconductor
N60V,RD(MAX)<100M@10V,RD(MAX)<12
G6N02L
G6N02L
Goford Semiconductor
MOSFET N-CH 20V 6A SOT-23-3L
G7P03S
G7P03S
Goford Semiconductor
P30V,RD(MAX)<22M@-10V,RD(MAX)<33
G12P03D3
G12P03D3
Goford Semiconductor
P30V,RD(MAX)<20M@-10V,RD(MAX)<26
G15N10C
G15N10C
Goford Semiconductor
N100V,RD(MAX)<110M@10V,RD(MAX)<1
G50N03D5
G50N03D5
Goford Semiconductor
N30V,RD(MAX)<4.5M@10V,RD(MAX)<8M
G09P02L
G09P02L
Goford Semiconductor
P20V,RD(MAX)<[email protected],RD(MAX)<3
G12P10K
G12P10K
Goford Semiconductor
P100V,RD(MAX)<200M@-10V,RD(MAX)<
GT100N12T
GT100N12T
Goford Semiconductor
N120V,RD(MAX)<10M@10V,VTH2.5V~3.
G20P10KE
G20P10KE
Goford Semiconductor
P-CH, -100V, 20A, RD(MAX)<116M@-