GT100N12D5

GT100N12D5

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GT100N12D5
Описание:
N120V,RD(MAX)<10M@10V,VTH2.5V~3.
Упаковка:
Tape & Reel (TR)
Datasheet:
GT100N12D5 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:GT100N12D5
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Goford Semiconductor
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):53b3b1ea0de8e56a28871162445a88f6
Current - Continuous Drain (Id) @ 25°C:01a654fc53f0b70a0ab169396b99d213
Drive Voltage (Max Rds On, Min Rds On):336d5ebc5436534e61d16e63ddfca327
Rds On (Max) @ Id, Vgs:9b252ea3ca8de6fc974b48a210216207
Vgs(th) (Max) @ Id:54e5d6e67176a5b9df661d089760961f
Gate Charge (Qg) (Max) @ Vgs:9e541cbc895757398ae8d0144a8ced7d
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:84fc9657ae69a4d13f1b0d70c9b497e9
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):74a0596c31a565874e735ffcb46899f7
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:fcc5df0bcd31033faaf59003f37c4576
Package / Case:67fd376bd79eda48286f8f6e0131d8c9
In Stock: 0
Stock:
0 Can Ship Immediately
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