G06NP06S2

G06NP06S2

Images are for reference only
See Product Specifications

G06NP06S2
Описание:
N/P60V,RD(MAX)<35M@10V,RD(MAX)<4
Упаковка:
Tape & Reel (TR)
Datasheet:
G06NP06S2 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:G06NP06S2
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Arrays
Производитель:Goford Semiconductor
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:8acbff0343e9e112a4da2ca533531819
FET Feature:eb6d8ae6f20283755b339c0dc273988b
Drain to Source Voltage (Vdss):86ca63bb9efbaa94bcb05b428144623c
Current - Continuous Drain (Id) @ 25°C:ff2da2e5c593aab4d0b1e137db724b7a
Rds On (Max) @ Id, Vgs:6881c673cd62a1bdf5c0ac6a625137e0
Vgs(th) (Max) @ Id:bf52a913ddf26dab274d6d723debd643
Gate Charge (Qg) (Max) @ Vgs:37c585c537009602c7eae9ccee7dbb6e
Input Capacitance (Ciss) (Max) @ Vds:336d5ebc5436534e61d16e63ddfca327
Power - Max:74e70d76a24935d50669ff57b17a7aa0
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Package / Case:f80d2dd5409d1e9f8a546eb6d6a8728d
Supplier Device Package:fe7cbfc5c8dc998814597054b009cbc7
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
NDS9947
NDS9947
Fairchild Semiconductor
P-CHANNEL POWER MOSFET
UPA1872BGR-9JG-E1-A
UPA1872BGR-9JG-E1-A
Renesas Electronics America Inc
POWER, 10A, 20V, N-CH MOSFET
TSM500P02DCQ RFG
TSM500P02DCQ RFG
Taiwan Semiconductor Corporation
MOSFET 2 P-CH 20V 4.7A 6TDFN
SI4816BDY-T1-GE3
SI4816BDY-T1-GE3
Vishay Siliconix
MOSFET 2N-CH 30V 5.8A 8-SOIC
MCCD2005-TP
MCCD2005-TP
Micro Commercial Co
MOSFET 2N-CH 20V 8A
ALD111933PAL
ALD111933PAL
Advanced Linear Devices Inc.
MOSFET 2N-CH 10.6V 8DIP
MTI200WX75GD-SMD
MTI200WX75GD-SMD
IXYS
IGBT MOD MOSFET SIXPACK ISOPLUS
NDS9952A
NDS9952A
Fairchild Semiconductor
POWER FIELD-EFFECT TRANSISTOR, 3
EPC2106ENGRT
EPC2106ENGRT
EPC
GAN TRANS 2N-CH 100V BUMPED DIE
IRF7103Q
IRF7103Q
Infineon Technologies
MOSFET 2N-CH 50V 3A 8-SOIC
BSC750N10NDGATMA1
BSC750N10NDGATMA1
Infineon Technologies
MOSFET 2N-CH 100V 3.2A 8TDSON
BSD235N L6327
BSD235N L6327
Infineon Technologies
MOSFET 2N-CH 20V 0.95A SOT363
Вас также может заинтересовать
GT090N06D52
GT090N06D52
Goford Semiconductor
N60V,RD(MAX)<9M@10V,RD(MAX)<13M@
G3404B
G3404B
Goford Semiconductor
N30V,RD(MAX)<22M@10V,RD(MAX)<35M
G28N03D3
G28N03D3
Goford Semiconductor
N30V,RD(MAX)<12M@10V,RD(MAX)<18M
G2014
G2014
Goford Semiconductor
N20V,RD(MAX)<[email protected],RD(MAX)<11M
G29
G29
Goford Semiconductor
P15V,RD(MAX)<[email protected],RD(MAX)<4
G70P02K
G70P02K
Goford Semiconductor
P15V,RD(MAX)<[email protected],RD(MAX)<
GC20N65T
GC20N65T
Goford Semiconductor
N650V,RD(MAX)<170M@10V,VTH2.5V~4
2301H
2301H
Goford Semiconductor
P30V,RD(MAX)<[email protected],RD(MAX)<
GT100N12D5
GT100N12D5
Goford Semiconductor
N120V,RD(MAX)<10M@10V,VTH2.5V~3.
G18P03D3
G18P03D3
Goford Semiconductor
P30V,RD(MAX)<10M@-10V,RD(MAX)<15
25P06
25P06
Goford Semiconductor
P60V,RD(MAX)<45M@-10V,VTH2V~3V T
G65P06D5
G65P06D5
Goford Semiconductor
P60V,RD(MAX)<18M@-10V,VTH-2V~-3V