G12P10K

G12P10K

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G12P10K
Описание:
P100V,RD(MAX)<200M@-10V,RD(MAX)<
Упаковка:
Tape & Reel (TR)
Datasheet:
G12P10K Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:G12P10K
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Goford Semiconductor
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:9945a529f9f3f7e23d6cd49cab56133a
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):227b5c7c7a2ed2ea3da210ed0860030d
Current - Continuous Drain (Id) @ 25°C:0b85066ca7fc96c0d9083cec9ee69087
Drive Voltage (Max Rds On, Min Rds On):336d5ebc5436534e61d16e63ddfca327
Rds On (Max) @ Id, Vgs:9f3714b9e8af9f06aeda21457d0997b3
Vgs(th) (Max) @ Id:66756bbbd2b15b665d5248f5ca1758a1
Gate Charge (Qg) (Max) @ Vgs:bc58166896f73e30fff327343c82357f
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:962a053518661c15850c63e83f95c24f
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):fc274f92834a99266004ef67c361c1a0
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:514f87a5defc29be7fc6e223fca16578
Package / Case:d6d5b809beb9f171e5b4097664b4dd95
In Stock: 2468
Stock:
2468 Can Ship Immediately
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