G65P06T

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See Product Specifications

Mfr. #:

G65P06T

Mfr.:

Goford Semiconductor

Описание:

P-60V,RD(MAX)<18M@-10V,VTH-2.0V~

Упаковка:

Tube

Datasheet:

G65P06T Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	G65P06T
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Goford Semiconductor
Упаковка:	Tube
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	9945a529f9f3f7e23d6cd49cab56133a
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	5568a11e95c42251b4839598cb5b4518
Current - Continuous Drain (Id) @ 25°C:	04a08bc34807ee57cc5ae68217d6ac53
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	6fb5e3253ad94f1b4d906797744ad366
Vgs(th) (Max) @ Id:	54e5d6e67176a5b9df661d089760961f
Gate Charge (Qg) (Max) @ Vgs:	4654abfef5e6b00713567f19e88c7a76
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	3f9329c3a50ab10f15d74299a718b3f2
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	56585d83f707826d265fba1f54e2fd6a
Operating Temperature:	57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:	506558024381a3c368cb88e9e94f6845
Supplier Device Package:	21023271cb741070ebf3efcc38cc7f20
Package / Case:	46bb638de2ea693de650d7f1c3115468

In Stock: 20

Stock:

20 Can Ship Immediately