G33N03S

G33N03S

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G33N03S
Описание:
N30V,RD(MAX)<12M@10V,RD(MAX)<13M
Упаковка:
Tape & Reel (TR)
Datasheet:
G33N03S Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:G33N03S
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Goford Semiconductor
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):6f065265b5ad79aa8b78335bb14c6420
Current - Continuous Drain (Id) @ 25°C:5cd0f41eb076c80bc91cb5a6ee59fcd6
Drive Voltage (Max Rds On, Min Rds On):214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:6ab95c31cca7449da86f86ab89f40c8f
Vgs(th) (Max) @ Id:a209081fc9e80668dd6ffb499d3c9fcb
Gate Charge (Qg) (Max) @ Vgs:057f8fba97f52dc675a0ba1139aefe99
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:d2faa57308b409338f3b5c5db757e1c4
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):380241922d5d52a7836817671258e4e5
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:fe7cbfc5c8dc998814597054b009cbc7
Package / Case:f80d2dd5409d1e9f8a546eb6d6a8728d
In Stock: 4000
Stock:
4000 Can Ship Immediately
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