NP28N10SDE-E1-AY

NP28N10SDE-E1-AY

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NP28N10SDE-E1-AY
Mfr.:
Описание:
NP28N10SDE-E1-AY - MOS FIELD EFF
Упаковка:
Bulk
Datasheet:
NP28N10SDE-E1-AY Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:NP28N10SDE-E1-AY
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Renesas
Упаковка:Bulk
Product Status:ec30c235d0eb792797af1aa1d11759a7
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):227b5c7c7a2ed2ea3da210ed0860030d
Current - Continuous Drain (Id) @ 25°C:eb744f26e77c633f46572ea54111f2c4
Drive Voltage (Max Rds On, Min Rds On):214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:bf4c37130abe40bc5040e031701400c1
Vgs(th) (Max) @ Id:bae68a70e94fb31c33c772f4fdf89b99
Gate Charge (Qg) (Max) @ Vgs:4654abfef5e6b00713567f19e88c7a76
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:6f4e35990ecdde5dd1e17e2fbb542ea4
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):0f1582a6aa1c304a4c61f50db2b35915
Operating Temperature:a3ecb8c734de728296fa3b72c67bbd58
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:3ba68fd3a979af714873cbf5198dd145
Package / Case:d6d5b809beb9f171e5b4097664b4dd95
In Stock: 2500
Stock:
2500 Can Ship Immediately
  • Делиться:
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