03N06L

03N06L

Images are for reference only
See Product Specifications

03N06L
Описание:
N60V,RD(MAX)<100M@10V,RD(MAX)<12
Упаковка:
Tape & Reel (TR)
Datasheet:
03N06L Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:03N06L
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Goford Semiconductor
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):5568a11e95c42251b4839598cb5b4518
Current - Continuous Drain (Id) @ 25°C:657dae0913ee12be6fb2a6f687aae1c7
Drive Voltage (Max Rds On, Min Rds On):336d5ebc5436534e61d16e63ddfca327
Rds On (Max) @ Id, Vgs:ab9e8d3a8f4f2abf0f575f5805707b3e
Vgs(th) (Max) @ Id:b84520e401b6763187bb539da6d1dfbf
Gate Charge (Qg) (Max) @ Vgs:159916f84ead3d142d9c56373fd0245a
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:662b102a6592de6a373c3f79e5c22b61
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):38d969bd31592ce2ee4d681dcbb21fd0
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:ca2e3f0f4d8c71c0fd37e77f58d9ae2b
Package / Case:51bf93173785f0f3fc2d8b70cf119689
In Stock: 1900
Stock:
1900 Can Ship Immediately
  • Делиться:
Для использования с
UPA2351T1G(2)-E4-A
UPA2351T1G(2)-E4-A
Renesas Electronics America Inc
POWER FIELD-EFFECT TRANSISTOR
IXFN170N25X3
IXFN170N25X3
IXYS
MOSFET N-CH 250V 170A SOT227B
IRFP4332PBF
IRFP4332PBF
Infineon Technologies
MOSFET N-CH 250V 57A TO247AC
IXTA150N15X4-7
IXTA150N15X4-7
IXYS
MOSFET N-CH 150V 150A TO263-7
STP20N60M2-EP
STP20N60M2-EP
STMicroelectronics
MOSFET N-CHANNEL 600V 13A TO220
SIHA20N50E-E3
SIHA20N50E-E3
Vishay Siliconix
MOSFET N-CH 500V 19A TO220
STD4815NT4G
STD4815NT4G
onsemi
MOSFET N-CH 30V 35A DPAK
IPI11N60C3AAKSA2
IPI11N60C3AAKSA2
Infineon Technologies
MOSFET N-CH I2PAK
AOTF8T50PL
AOTF8T50PL
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 500V 8A TO220F
STD110N02RT4G
STD110N02RT4G
onsemi
MOSFET N-CH 24V 32A DPAK
RQ6C065BCTCR
RQ6C065BCTCR
Rohm Semiconductor
MOSFET P-CH 20V 6.5A TSMT6
R6030ENZ1C9
R6030ENZ1C9
Rohm Semiconductor
MOSFET N-CH 600V 30A TO247
Вас также может заинтересовать
3400L
3400L
Goford Semiconductor
N30V,RD(MAX)<27M@10V,RD(MAX)<33M
G1003B
G1003B
Goford Semiconductor
N100V,RD(MAX)<170M@10V,RD(MAX)<1
G30N03D3
G30N03D3
Goford Semiconductor
N30V,RD(MAX)<7M@10V,RD(MAX)<12M@
G12P03D3
G12P03D3
Goford Semiconductor
P30V,RD(MAX)<20M@-10V,RD(MAX)<26
GT110N06S
GT110N06S
Goford Semiconductor
N60V,RD(MAX)<[email protected],RD(MAX)<1
G86N06K
G86N06K
Goford Semiconductor
N60V,RD(MAX)<8.4M@10V,VTH2V~4V ,
G110N06K
G110N06K
Goford Semiconductor
N60V,RD(MAX)<6.4M@10V,RD(MAX)<8.
3415A
3415A
Goford Semiconductor
P20V,RD(MAX)<[email protected],RD(MAX)<6
G30N04D3
G30N04D3
Goford Semiconductor
MOSFET N-CH 40V 30A DFN33-8L
G100N03D5
G100N03D5
Goford Semiconductor
N-CH, 30V, 100A, RD(MAX)<3.5M@10
GT035N06T
GT035N06T
Goford Semiconductor
N-CH, 60V,170A, RD(MAX)<3.5M@10V
GT095N10K
GT095N10K
Goford Semiconductor
N100V, RD(MAX)<10.5M@10V,RD(MAX)