G2312

G2312

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See Product Specifications

G2312
Описание:
N20V,RD(MAX)<18M@10V,RD(MAX)<20M
Упаковка:
Tape & Reel (TR)
Datasheet:
G2312 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:G2312
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Goford Semiconductor
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):1d4b1d1d0414ed964cb9de7f5a150f63
Current - Continuous Drain (Id) @ 25°C:4dd8e57bba533ac70e32f1b72e65943c
Drive Voltage (Max Rds On, Min Rds On):336d5ebc5436534e61d16e63ddfca327
Rds On (Max) @ Id, Vgs:a1ed8573106ebe2231ee6742ba17cd0c
Vgs(th) (Max) @ Id:fb74aa2ff10bb77cff79f565b135beed
Gate Charge (Qg) (Max) @ Vgs:428bee99adab6a57715cf6da1217f566
Vgs (Max):ed5450af4f622d5d61945c0592c793a8
Input Capacitance (Ciss) (Max) @ Vds:2a9657250d308a017fe3f576470d3a1b
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):9d88a7b81676b2170839e1f88d687a04
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:cdbfc7f87dda2b41686a11d9db7bf62e
Package / Case:51bf93173785f0f3fc2d8b70cf119689
In Stock: 2990
Stock:
2990 Can Ship Immediately
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