G2312

G2312

Images are for reference only
See Product Specifications

G2312
Описание:
N20V,RD(MAX)<18M@10V,RD(MAX)<20M
Упаковка:
Tape & Reel (TR)
Datasheet:
G2312 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:G2312
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Goford Semiconductor
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):1d4b1d1d0414ed964cb9de7f5a150f63
Current - Continuous Drain (Id) @ 25°C:4dd8e57bba533ac70e32f1b72e65943c
Drive Voltage (Max Rds On, Min Rds On):336d5ebc5436534e61d16e63ddfca327
Rds On (Max) @ Id, Vgs:a1ed8573106ebe2231ee6742ba17cd0c
Vgs(th) (Max) @ Id:fb74aa2ff10bb77cff79f565b135beed
Gate Charge (Qg) (Max) @ Vgs:428bee99adab6a57715cf6da1217f566
Vgs (Max):ed5450af4f622d5d61945c0592c793a8
Input Capacitance (Ciss) (Max) @ Vds:2a9657250d308a017fe3f576470d3a1b
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):9d88a7b81676b2170839e1f88d687a04
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:cdbfc7f87dda2b41686a11d9db7bf62e
Package / Case:51bf93173785f0f3fc2d8b70cf119689
In Stock: 2990
Stock:
2990 Can Ship Immediately
  • Делиться:
Для использования с
NTD70N03R-1
NTD70N03R-1
onsemi
N-CHANNEL POWER MOSFET
IXTX5N250
IXTX5N250
IXYS
MOSFET N-CH 2500V 5A PLUS247-3
TK3A60DA(Q,M)
TK3A60DA(Q,M)
Toshiba Semiconductor and Storage
MOSFET N-CH 600V 2.5A TO220SIS
IPP60R160C6XKSA1
IPP60R160C6XKSA1
Infineon Technologies
MOSFET N-CH 600V 23.8A TO220-3
ZVN0540A
ZVN0540A
Diodes Incorporated
MOSFET N-CH 400V 90MA TO92-3
SPP73N03S2L08XK
SPP73N03S2L08XK
Infineon Technologies
MOSFET N-CH 30V 73A TO220-3
MTP50P03HDL
MTP50P03HDL
onsemi
MOSFET P-CH 30V 50A TO220AB
STP200NF04
STP200NF04
STMicroelectronics
MOSFET N-CH 40V 120A TO220AB
STL15N3LLH5
STL15N3LLH5
STMicroelectronics
MOSFET N-CH 30V 15A POWERFLAT
CPC3730C
CPC3730C
IXYS Integrated Circuits Division
MOSFET N-CH 350V SOT89
IPD65R950CFDBTMA1
IPD65R950CFDBTMA1
Infineon Technologies
MOSFET N-CH 650V 3.9A TO252-3
NVB5860NLT4G
NVB5860NLT4G
onsemi
MOSFET N-CH 60V 220A D2PAK-3
Вас также может заинтересовать
G4616
G4616
Goford Semiconductor
N+P/-40V,RD(MAX)<20M@10V,RD(MAX)
G2012
G2012
Goford Semiconductor
N20V,RD(MAX)<[email protected],RD(MAX)<18
G35N02K
G35N02K
Goford Semiconductor
N20V,RD(MAX)<[email protected],RD(MAX)<18
G06N10
G06N10
Goford Semiconductor
N100V,RD(MAX)<240M@10V,VTH1.2V~3
G15N10C
G15N10C
Goford Semiconductor
N100V,RD(MAX)<110M@10V,RD(MAX)<1
18N10
18N10
Goford Semiconductor
N100V,RD(MAX)<53M@10V,RD(MAX)<63
G20N03K
G20N03K
Goford Semiconductor
N30V,RD(MAX)<20M@10V,RD(MAX)<24M
G65P06K
G65P06K
Goford Semiconductor
P60V,RD(MAX)<18M@-10V,VTH-2V~-3.
G12P10K
G12P10K
Goford Semiconductor
P100V,RD(MAX)<200M@-10V,RD(MAX)<
G02P06
G02P06
Goford Semiconductor
P60V,RD(MAX)<190M@-10V,RD(MAX)<2
G60N10T
G60N10T
Goford Semiconductor
N100V,RD(MAX)<25M@10V,RD(MAX)<30
GT088N06T
GT088N06T
Goford Semiconductor
N60V,RD(MAX)<9M@10V,RD(MAX)<13M@