Logo Logo
0
Мой запрос предложений
English


GT52N10T

GT52N10T

Images are for reference only
See Product Specifications

GT52N10T
Mfr.:
Описание:
N100V,RD(MAX)<9M@10V,RD(MAX)<15M
Упаковка:
Tube
Datasheet:
GT52N10T Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:GT52N10T
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Goford Semiconductor
Упаковка:Tube
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):227b5c7c7a2ed2ea3da210ed0860030d
Current - Continuous Drain (Id) @ 25°C:6d893be79b61d02b6fe4a02abaf3ee3d
Drive Voltage (Max Rds On, Min Rds On):336d5ebc5436534e61d16e63ddfca327
Rds On (Max) @ Id, Vgs:1e9dab23e7b9f962e1ad5d1a36130add
Vgs(th) (Max) @ Id:bae68a70e94fb31c33c772f4fdf89b99
Gate Charge (Qg) (Max) @ Vgs:cfb30d70e9813b4f562f2b84cc798df0
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:09a744fee33db7f9f6cc5995c6ae0078
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):bc6931c3b5eb0a352bfcdb19e79de1b6
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:506558024381a3c368cb88e9e94f6845
Supplier Device Package:21023271cb741070ebf3efcc38cc7f20
Package / Case:a02e0d1a928de3366340ceae094aecd8
In Stock: 38
Stock:
38 Can Ship Immediately
  • Делиться:
Для использования с
TSM220NB06CR RLG
TSM220NB06CR RLG
Taiwan Semiconductor Corporation
MOSFET N-CH 60V 8A/35A 8PDFN
2N7002HSX
2N7002HSX
Nexperia USA Inc.
2N7002HS/SOT363/SC-88
2SK2552B-T1-AT
2SK2552B-T1-AT
Renesas Electronics America Inc
N-CHANNEL SMALL SIGNAL MOSFET
FDPF5N50NZF
FDPF5N50NZF
Fairchild Semiconductor
MOSFET N-CH 500V 4.2A TO220F
BSS123,215
BSS123,215
Nexperia USA Inc.
MOSFET N-CH 100V 150MA TO236AB
DN2625K4-G
DN2625K4-G
Microchip Technology
MOSFET N-CH 250V 1.1A TO252
FQD5N15TF
FQD5N15TF
Fairchild Semiconductor
MOSFET N-CH 150V 4.3A DPAK
DMN31D5L-7
DMN31D5L-7
Diodes Incorporated
MOSFET N-CH 30V 500MA SOT23 T&R
IPD70N12S3L12ATMA1
IPD70N12S3L12ATMA1
Infineon Technologies
MOSFET N-CHANNEL_100+
IRFS7540TRLPBF
IRFS7540TRLPBF
Infineon Technologies
MOSFET N-CH 60V 110A D2PAK
APT50M85JVFR
APT50M85JVFR
Microchip Technology
MOSFET N-CH 500V 50A ISOTOP
94-2989
94-2989
Infineon Technologies
MOSFET N-CH 55V 64A D2PAK
Вас также может заинтересовать
G4616
G4616
Goford Semiconductor
N+P/-40V,RD(MAX)<20M@10V,RD(MAX)
03N06L
03N06L
Goford Semiconductor
N60V,RD(MAX)<100M@10V,RD(MAX)<12
G1006LE
G1006LE
Goford Semiconductor
N100V,RD(MAX)<150M@10V,RD(MAX)<1
G01N20LE
G01N20LE
Goford Semiconductor
N200V,RD(MAX)<850M@10V,RD(MAX)<9
G16P03D3
G16P03D3
Goford Semiconductor
P30V,RD(MAX)<12M@-10V,RD(MAX)<18
G70P02K
G70P02K
Goford Semiconductor
P15V,RD(MAX)<[email protected],RD(MAX)<
06N06L
06N06L
Goford Semiconductor
N60V,RD(MAX)<42M@10V,RD(MAX)<46M
G6P06
G6P06
Goford Semiconductor
P60V,RD(MAX)<96M@-10V,RD(MAX)<14
GT095N10D5
GT095N10D5
Goford Semiconductor
N100V,RD(MAX)<11M@10V,RD(MAX)<15
G65P06D5
G65P06D5
Goford Semiconductor
P60V,RD(MAX)<18M@-10V,VTH-2V~-3V
G50N03J
G50N03J
Goford Semiconductor
N30V,RD(MAX)<7M@10V,RD(MAX)<12M@
GT088N06T
GT088N06T
Goford Semiconductor
N60V,RD(MAX)<9M@10V,RD(MAX)<13M@