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See Product Specifications
| номер части: | GT52N10T |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - FETs, MOSFETs - Single |
| Производитель: | Goford Semiconductor |
| Упаковка: | Tube |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| FET Type: | 43272ae8a787f198ca6b6227abc259ef |
| Technology: | 54a5be1d27124bd4f8897fe25aa94ecc |
| Drain to Source Voltage (Vdss): | 227b5c7c7a2ed2ea3da210ed0860030d |
| Current - Continuous Drain (Id) @ 25°C: | 6d893be79b61d02b6fe4a02abaf3ee3d |
| Drive Voltage (Max Rds On, Min Rds On): | 336d5ebc5436534e61d16e63ddfca327 |
| Rds On (Max) @ Id, Vgs: | 1e9dab23e7b9f962e1ad5d1a36130add |
| Vgs(th) (Max) @ Id: | bae68a70e94fb31c33c772f4fdf89b99 |
| Gate Charge (Qg) (Max) @ Vgs: | cfb30d70e9813b4f562f2b84cc798df0 |
| Vgs (Max): | ce6f0ee0e28319cd77230729fffeb8d1 |
| Input Capacitance (Ciss) (Max) @ Vds: | 09a744fee33db7f9f6cc5995c6ae0078 |
| FET Feature: | 336d5ebc5436534e61d16e63ddfca327 |
| Power Dissipation (Max): | bc6931c3b5eb0a352bfcdb19e79de1b6 |
| Operating Temperature: | 6a357bb51737d359c8bcaa66995aadb4 |
| Mounting Type: | 506558024381a3c368cb88e9e94f6845 |
| Supplier Device Package: | 21023271cb741070ebf3efcc38cc7f20 |
| Package / Case: | a02e0d1a928de3366340ceae094aecd8 |
