BFP183WE6327

BFP183WE6327

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BFP183WE6327
Описание:
RF TRANSISTOR, L BAND, NPN
Упаковка:
Bulk
Datasheet:
BFP183WE6327 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:BFP183WE6327
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - Bipolar (BJT) - RF
Производитель:Infineon Technologies
Упаковка:Bulk
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Transistor Type:e3d31b6d6c1368232482785f7e6d9bd1
Voltage - Collector Emitter Breakdown (Max):ffb6e22cfcfa6ff4ab883374e06309ac
Frequency - Transition:83309ea0d034db1d6a4be2510adc161e
Noise Figure (dB Typ @ f):2bc2962a0a92507d21ab199c012b4a7e
Gain:a8e79018be3168f3e7b713fa291ccaef
Power - Max:1882363e984304a482c0c41d1c7cec73
DC Current Gain (hFE) (Min) @ Ic, Vce:c7644f02617eb84c3fb796c488d3c409
Current - Collector (Ic) (Max):1341fd76a7b2cb21d1016c983c7a4fa9
Operating Temperature:a05f788eae82918882d3b91ce435570b
Mounting Type:6277abee52798fa9d158f75ff84dd873
Package / Case:a855c364a8dbd6d0fe3b0b0928254d58
Supplier Device Package:1397efbe8865c055e1b9240b44b69d70
In Stock: 0
Stock:
0 Can Ship Immediately
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Для использования с
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