MT3S111(TE85L,F)

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See Product Specifications

Mfr. #:

MT3S111(TE85L,F)

Mfr.:

Toshiba Semiconductor and Storage

Описание:

RF TRANS NPN 6V 11.5GHZ SMINI

Упаковка:

Tape & Reel (TR)

Datasheet:

MT3S111(TE85L,F) Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	MT3S111(TE85L,F)
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - Bipolar (BJT) - RF
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
Transistor Type:	e3d31b6d6c1368232482785f7e6d9bd1
Voltage - Collector Emitter Breakdown (Max):	d58bb95aef80a9b06259c05a8650ba50
Frequency - Transition:	b37b1a3e5ada1e4dee1f450eb3e7ff78
Noise Figure (dB Typ @ f):	851dd566823382d7adbda98a8f2ca85f
Gain:	3291a99a26bee52a54a0c8e507663005
Power - Max:	10060cb6b2532419fae3d1d1b5a7bc1e
DC Current Gain (hFE) (Min) @ Ic, Vce:	7b3705ab9394e097c241356096848bf8
Current - Collector (Ic) (Max):	8fa6a3a617ed852de22fab67a97483fa
Operating Temperature:	a05f788eae82918882d3b91ce435570b
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Package / Case:	51bf93173785f0f3fc2d8b70cf119689
Supplier Device Package:	6fed134d4370a69345842176a59f3920