GT30J341,Q

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See Product Specifications

Mfr. #:

GT30J341,Q

Mfr.:

Toshiba Semiconductor and Storage

Описание:

IGBT TRANS 600V 30A TO3PN

Упаковка:

Tray

Datasheet:

GT30J341,Q Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	GT30J341,Q
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - IGBTs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tray
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
IGBT Type:	336d5ebc5436534e61d16e63ddfca327
Voltage - Collector Emitter Breakdown (Max):	9b63fe166715207d51445c226ada9c46
Current - Collector (Ic) (Max):	f1f4524bac8d993ffb5a87e60afa1528
Current - Collector Pulsed (Icm):	4db308cc7032b73099a49fc453f78340
Vce(on) (Max) @ Vge, Ic:	2dd0ef0abf3528624b4e21f3bcd55de8
Power - Max:	b40eb93ee4ee93a819d876d34e613a08
Switching Energy:	83a72b32748e9623833325d480f1012c
Input Type:	eb6d8ae6f20283755b339c0dc273988b
Gate Charge:	336d5ebc5436534e61d16e63ddfca327
Td (on/off) @ 25°C:	690f3bfe199803573db60ca015b529a1
Test Condition:	a5c5147fce5491350e77c4238231c4cf
Reverse Recovery Time (trr):	b0d7994e039b4509c995ea8ecaf1bb5d
Operating Temperature:	dfb4ad46e1ac805451b8f397e97630b4
Mounting Type:	506558024381a3c368cb88e9e94f6845
Package / Case:	a37ad9863329afbf5b7bab5645143153
Supplier Device Package:	802becb26be6cafacf181bb527af5311