BFP196WE6327

BFP196WE6327

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See Product Specifications

BFP196WE6327
Описание:
RF TRANSISTOR, L BAND, NPN
Упаковка:
Bulk
Datasheet:
BFP196WE6327 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:BFP196WE6327
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - Bipolar (BJT) - RF
Производитель:Infineon Technologies
Упаковка:Bulk
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Transistor Type:e3d31b6d6c1368232482785f7e6d9bd1
Voltage - Collector Emitter Breakdown (Max):ffb6e22cfcfa6ff4ab883374e06309ac
Frequency - Transition:183f894994e4ce5279b90b57218e176e
Noise Figure (dB Typ @ f):cb06d6366d2d824751a4230cadc4bdcf
Gain:79524a5201ece661dd37b0bf942d7c94
Power - Max:10060cb6b2532419fae3d1d1b5a7bc1e
DC Current Gain (hFE) (Min) @ Ic, Vce:050201a0e405ead9f4d4cd694eb84bf4
Current - Collector (Ic) (Max):fc92dd3b69ad1d37d6fd6bb30e37477e
Operating Temperature:a05f788eae82918882d3b91ce435570b
Mounting Type:6277abee52798fa9d158f75ff84dd873
Package / Case:a855c364a8dbd6d0fe3b0b0928254d58
Supplier Device Package:1397efbe8865c055e1b9240b44b69d70
In Stock: 32200
Stock:
32200 Can Ship Immediately
  • Делиться:
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