BSC080N12LSGATMA1

BSC080N12LSGATMA1

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BSC080N12LSGATMA1
Описание:
TRENCH >=100V PG-TDSON-8
Упаковка:
Tape & Reel (TR)
Datasheet:
BSC080N12LSGATMA1 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:BSC080N12LSGATMA1
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Infineon Technologies
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):53b3b1ea0de8e56a28871162445a88f6
Current - Continuous Drain (Id) @ 25°C:0288155ad67f16f874d73007b0819e07
Drive Voltage (Max Rds On, Min Rds On):214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:c4dfa886937458df6e16492f5d41615f
Vgs(th) (Max) @ Id:f0b063a82a960406853bc3a4b905f28c
Gate Charge (Qg) (Max) @ Vgs:08c3980d5b2aa05ae5b625db896581d6
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:e24616b2d610e11a6e1e6f3a3b5856e9
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):ef63d5ff1af8219757fbcf5bac5790d9
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:aa86df089e032212ddfb91ec058695d4
Package / Case:7f82de9f5c66f9f803bc2f6ee2b90c1b
In Stock: 0
Stock:
0 Can Ship Immediately
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