BSM100GAL120DLCKHOSA1

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See Product Specifications

Mfr. #:

Mfr.:

Infineon Technologies

Описание:

IGBT MOD 1200V 205A 835W

Упаковка:

Tray

Datasheet:

BSM100GAL120DLCKHOSA1 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	BSM100GAL120DLCKHOSA1
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - IGBTs - Modules
Производитель:	Infineon Technologies
Упаковка:	Tray
Product Status:	ec30c235d0eb792797af1aa1d11759a7
IGBT Type:	336d5ebc5436534e61d16e63ddfca327
Configuration:	fd5764218ce8f5999b3d90e72eb004d4
Voltage - Collector Emitter Breakdown (Max):	edca1d2343e4e5615ce51a879f622a76
Current - Collector (Ic) (Max):	f2bbe9d38bb199188a5f268f4e66d662
Power - Max:	d19d1e43d4cc3479bd7df9f3fde22c57
Vce(on) (Max) @ Vge, Ic:	a6fe763e62d4ca2670a982dee368a039
Current - Collector Cutoff (Max):	0791270b73e4d7befa4d41e9866c702c
Input Capacitance (Cies) @ Vce:	0ecf2e747df84fbf7e804a827cf5c98b
Input:	eb6d8ae6f20283755b339c0dc273988b
NTC Thermistor:	bafd7322c6e97d25b6299b5d6fe8920b
Operating Temperature:	1cc044b445792894830ff2687961e532
Mounting Type:	678457b2fd6f368ccd41b6654ad866df
Package / Case:	e55f75a29310d7b60f7ac1d390c8ae42
Supplier Device Package:	e55f75a29310d7b60f7ac1d390c8ae42