DF200R12W1H3FB11BOMA1

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See Product Specifications

Mfr. #:

Mfr.:

Infineon Technologies

Описание:

IGBT MOD 1200V 30A 20MW

Упаковка:

Tray

Datasheet:

DF200R12W1H3FB11BOMA1 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	DF200R12W1H3FB11BOMA1
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - IGBTs - Modules
Производитель:	Infineon Technologies
Упаковка:	Tray
Product Status:	ccbd814be8d73616679e7f5a64ce1cee
IGBT Type:	bc8112dacc055dbbe98cd7db53249587
Configuration:	bb19530c2e647efa9597891a2071629a
Voltage - Collector Emitter Breakdown (Max):	edca1d2343e4e5615ce51a879f622a76
Current - Collector (Ic) (Max):	e5e40f3fe57770f170a10089997a057e
Power - Max:	9d8862b83eff934c85741ccf44479451
Vce(on) (Max) @ Vge, Ic:	d56db3fac667aefa024eb182088c0e54
Current - Collector Cutoff (Max):	3fcea8972184a62a3c429fabfb1122c7
Input Capacitance (Cies) @ Vce:	2d543953a372efce01eb1b2b22af5014
Input:	eb6d8ae6f20283755b339c0dc273988b
NTC Thermistor:	93cba07454f06a4a960172bbd6e2a435
Operating Temperature:	628c93cb578f4289de8fa3e2e2431cc2
Mounting Type:	678457b2fd6f368ccd41b6654ad866df
Package / Case:	e55f75a29310d7b60f7ac1d390c8ae42
Supplier Device Package:	e55f75a29310d7b60f7ac1d390c8ae42