IAUT165N08S5N029ATMA2

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See Product Specifications

Mfr. #:

Mfr.:

Infineon Technologies

Описание:

MOSFET N-CH 80V 165A 8HSOF

Упаковка:

Tape & Reel (TR)

Datasheet:

IAUT165N08S5N029ATMA2 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	IAUT165N08S5N029ATMA2
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Infineon Technologies
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	ebd7aaeec2792ddf9fe1af48370ec717
Current - Continuous Drain (Id) @ 25°C:	bdb86a7f66fd4f0274a01a97a28b9894
Drive Voltage (Max Rds On, Min Rds On):	9271e32297e2bbc49bb4aadcd764fb6f
Rds On (Max) @ Id, Vgs:	6bd43bf013f61c4eb0d131c9c0bd422d
Vgs(th) (Max) @ Id:	0f1044df91f8c660ecac03f0dd0ebd1c
Gate Charge (Qg) (Max) @ Vgs:	023f224d6b8afb36d9df8bc446b12e5a
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	b6d08a14da899cee6be138fea91e47dd
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	0a5d5528eeabf2386035a4e8c1f9365c
Operating Temperature:	57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	881308f1b46c6442e96cd6c906928591
Package / Case:	a976ee29126ce1a6bb3b65de97278f82