IAUZ30N08S5N186ATMA1

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See Product Specifications

Mfr. #:

Mfr.:

Infineon Technologies

Описание:

MOSFET_(75V 120V( PG-TSDSON-8

Упаковка:

Tape & Reel (TR)

Datasheet:

IAUZ30N08S5N186ATMA1 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	IAUZ30N08S5N186ATMA1
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Infineon Technologies
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	ebd7aaeec2792ddf9fe1af48370ec717
Current - Continuous Drain (Id) @ 25°C:	4df3bcc49abf57549071a2c8a2fb97e9
Drive Voltage (Max Rds On, Min Rds On):	9271e32297e2bbc49bb4aadcd764fb6f
Rds On (Max) @ Id, Vgs:	37537a254da5b2e0ca8fddbefe6e20bc
Vgs(th) (Max) @ Id:	e475ba8430876c317986a5324c74ccdc
Gate Charge (Qg) (Max) @ Vgs:	113cda8c94fca137e9574cee9a5645a9
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	09c9501650ad5ff81c23c9dce87bab75
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	286e8443eab7d18595b7ebdee6abf12d
Operating Temperature:	57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	b33c66258f3917bf0e5bdf0d5f793b89
Package / Case:	7f82de9f5c66f9f803bc2f6ee2b90c1b