IMW65R030M1HXKSA1

IMW65R030M1HXKSA1

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IMW65R030M1HXKSA1
Описание:
SILICON CARBIDE MOSFET, PG-TO247
Упаковка:
Tube
Datasheet:
IMW65R030M1HXKSA1 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:IMW65R030M1HXKSA1
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Infineon Technologies
Упаковка:Tube
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:ed9a2411b032b5ad765b9d5f6b1bc8e1
Drain to Source Voltage (Vdss):347f255197950e6b02089b73b6a8acdd
Current - Continuous Drain (Id) @ 25°C:036d2b0bba9e9111dfcfbe4715924567
Drive Voltage (Max Rds On, Min Rds On):4fe830fc54951fe85de6fed766954259
Rds On (Max) @ Id, Vgs:da76627571432153b7d020935d72c41e
Vgs(th) (Max) @ Id:8db822f312fda5d0ae051e3e57419009
Gate Charge (Qg) (Max) @ Vgs:62b41766e8e3d897dbfd8efdae852020
Vgs (Max):ce6e022cb46fb9842012492ce3c7f5cb
Input Capacitance (Ciss) (Max) @ Vds:41c4acba54f43acfe925d6a11927bfd8
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):0130669bb1c9400bd9cbb50dae14b322
Operating Temperature:57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:506558024381a3c368cb88e9e94f6845
Supplier Device Package:94db0f826d433e889cdfd6495a3b9fde
Package / Case:748a8539a6c3c7dbdb455218c72fac40
In Stock: 231
Stock:
231 Can Ship Immediately
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