IPA80R1K4P7

IPA80R1K4P7

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IPA80R1K4P7
Описание:
POWER FIELD-EFFECT TRANSISTOR
Упаковка:
Bulk
Datasheet:
IPA80R1K4P7 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:IPA80R1K4P7
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Infineon Technologies
Упаковка:Bulk
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):faca79d8bea430c6302af6f2e2f59d12
Current - Continuous Drain (Id) @ 25°C:7d3de555b1c3a2ae51332998545e5d39
Drive Voltage (Max Rds On, Min Rds On):76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:36073b41952919fe60d149d7d70183db
Vgs(th) (Max) @ Id:0d7eb00776ec967e56d0c9c9626df8f7
Gate Charge (Qg) (Max) @ Vgs:9a935c8a1e91b57e9b3af740b54c1dd2
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:adfb014f1d1205161cb56957fab40747
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):e3e5fad0a095799c910ccd30b3b1b37e
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:506558024381a3c368cb88e9e94f6845
Supplier Device Package:08b04599a5d53c9026e6df09df877bae
Package / Case:a02e0d1a928de3366340ceae094aecd8
In Stock: 0
Stock:
0 Can Ship Immediately
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